http://www.www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf





UNIKC
UNIKC

P0903BDB Datasheet Preview

P0903BDB Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

P0903BDB pdf
P0903BDB
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 9mΩ @VGS = 10V
ID
59A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC= 25 °C
TC= 100 °C
ID
IDM
59
37
150
Avalanche Current
IAS 28
Avalanche Energy
L=0.1mH
EAS
39
Power Dissipation
TC= 25 °C
TC= 100°C
PD
54
21
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
TYPICAL
MAXIMUM UNITS
2.3 °C / W
REV 1.0 1 2014/5/7



UNIKC
UNIKC

P0903BDB Datasheet Preview

P0903BDB Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

P0903BDB pdf
P0903BDB
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS =24V, VGS = 0V
VDS =20V, VGS = 0V, TJ = 125°C
30
1 1.6
3
V
±100 nA
1
mA
10
Drain-Source On-State
Resistance1
RDS(ON)
VGS =4.5V, ID =20A
VGS =10V, ID =20A
11 14
7.3 9
Forward Transconductance1
gfs
VDS =5V, ID =20A
35 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VGS = 0V, VDS = 15V, f = 1MHz
844
175 pF
129
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
1.3 Ω
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 0.5V(BR)DSS, VGS = 10V,
ID = 20A
VDS = 15V ,
ID20A, VGS = 10V, RGEN =6Ω
20
3 nC
6.2
16
25
nS
60
16
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
59 A
Forward Voltage1
VSD IF = 20A, VGS = 0V
1.3 V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 20A, dlF/dt = 100A /ms
24 nS
14 nC
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
REV 1.0 2 2014/5/7


Part Number P0903BDB
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC
Total Page 5 Pages
PDF Download
P0903BDB pdf
Download PDF File
P0903BDB pdf
View for Mobile



Buy Electronic Components




Related Datasheet

1 P0903BD N-Channel Enhancement Mode MOSFET UNIKC
UNIKC
P0903BD pdf
2 P0903BDA N-Channel Enhancement Mode MOSFET UNIKC
UNIKC
P0903BDA pdf
3 P0903BDB N-Channel Enhancement Mode MOSFET UNIKC
UNIKC
P0903BDB pdf
4 P0903BDG N-Channel Enhancement Mode MOSFET UNIKC
UNIKC
P0903BDG pdf
5 P0903BDG N-Channel Logic Level Enhancement Mode Field Effect Transistor Niko
Niko
P0903BDG pdf
6 P0903BDL N-Channel Enhancement Mode MOSFET UNIKC
UNIKC
P0903BDL pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components