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P085AATX Datasheet Preview

P085AATX Datasheet

N-Channel Enhancement Mode MOSFET

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P085AATX
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
55V 7.5mΩ @VGS = 10V
ID
110A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current1
Pulsed Drain Current2
TC = 25 °C
TC = 100 °C
ID
IDM
110
69
300
Avalanche Current
IAS 106
Avalanche Energy
L = 0.1mH
EAS
561
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
166
66
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Limited by maximum junction temperature.
2Limited by package.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
0.75
62.5
UNITS
°C / W
REV 1.0
1 2014/7/21




UNIKC
UNIKC

P085AATX Datasheet Preview

P085AATX Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

P085AATX pdf
P085AATX
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
55
234
±100
Zero Gate Voltage Drain Current
IDSS
VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V , TJ = 125 °C
1
25
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 10V, ID = 62A
6.5 7.5
Forward Transconductance1
gfs
VDS = 10V, ID = 62A
96
DYNAMIC
Input Capacitance
Ciss
4440
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
1170
Reverse Transfer Capacitance
Crss
157
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 0V, f = 1MHz
VDS = 28V, VGS = 10V,
ID = 62A
VDD = 15V, ID @ 62A,
VGS = 10V, RGEN = 6Ω
2.1
92
27
39
20
110
50
65
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 62A, VGS = 0V
110
1.3
Reverse Recovery Time
trr VGS = 0 V, IF = 62 A,
Reverse Recovery Charge
Qrr
dIF / dt = 100 A/ms
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
114
220
2Independent of operating temperature.
3Limited by maximum junction temperature.
UNITS
V
nA
mA
S
pF
Ω
nC
nS
A
V
nS
nC
REV 1.0
2 2014/7/21




UNIKC
UNIKC

P085AATX Datasheet Preview

P085AATX Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

P085AATX pdf
P085AATX
N-Channel Enhancement Mode MOSFET
REV 1.0
3 2014/7/21




Part Number P085AATX
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC
Total Page 5 Pages
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