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P0806ATX Datasheet Preview

P0806ATX Datasheet

N-Channel Enhancement Mode MOSFET

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P0806ATX pdf
P0806ATX
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 8mΩ @VGS = 10V
ID
110A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current1
Pulsed Drain Current2
TC = 25 °C
TC = 100 °C
ID
IDM
110
69
300
Avalanche Current
IAS 102
Avalanche Energy
L = 0.1mH
EAS
525
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
166
66
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Limited by maximum junction temperature.
2Limited by package.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
0.75
62.5
UNITS
°C / W
Ver 1.0
1 2012/4/16



UNIKC
UNIKC

P0806ATX Datasheet Preview

P0806ATX Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

P0806ATX pdf
P0806ATX
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current1
Drain-Source On-State
FRoerswisatradncTera1 nsconductance1
ID(ON)
RDS(ON)
gfs
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 60V, VGS = 0V
VDS = 48V, VGS = 0V , TJ = 125 °C
VDS = 10V, VGS = 10V
VGS = 10V, ID = 55A
VDS = 50V, ID = 55A
60
234
±100
1
25
100
6.9 8
90
DYNAMIC
Input Capacitance
Ciss
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
Reverse Transfer Capacitance
Crss
4470
1090
120
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
2
Total Gate Charge2
Qg
91
Gate-Source Charge2
Qgs VDS = 30V, VGS = 10V, ID = 50A
23
Gate-Drain Charge2
Qgd
33
Turn-On Delay Time2
td(on)
20
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = 15V,
ID @ 55A, VGS = 10V, RGEN = 6Ω
110
50
Fall Time2
tf
65
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 55A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
VGS = 0V, IF = 55A,
dlF/dt = 100A / μS
125
260
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Limited by maximum junction temperature.
110
1.3
UNIT
V
nA
mA
A
mΩ
S
nF
Ω
nC
nS
A
V
nS
nC
Ver 1.0
2 2012/4/16


Part Number P0806ATX
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC
Total Page 5 Pages
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