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P0804BVG Datasheet Preview

P0804BVG Datasheet

N-Channel Enhancement Mode MOSFET

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P0804BVG pdf
P0804BVG
N-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
40V 12mΩ @VGS = 10V
ID
12A
SOP- 08
100% UIS tested
100% Rg tested
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC= 100 °C
ID
IDM
12
8
50
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
2.5
1
Operating Junction & Storage Temperature Range
Lead Temperature (1/16" from case for 10 sec.)
Tj, Tstg
TL
-55 to 150
275
UNITS
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
Case-to-Heatsink
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
RqCS
TYPICAL
0.5
MAXIMUM
25
50
UNITS
°C / W
REV 1.1
1 2014-4-25



UNIKC
UNIKC

P0804BVG Datasheet Preview

P0804BVG Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

P0804BVG pdf
P0804BVG
N-Channel Logic Level Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
40
1.5 2.0 3.0
V
±250 nA
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
VDS = 32V, VGS = 0V
VDS = 30V, VGS = 0V , TC = 125 °C
VDS = 10V, VGS = 10V
50
1
mA
10
A
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 7V, ID = 12A
VGS = 10V, ID = 12A
VDS = 10V, ID = 12A
11 15
7 12
25 S
DYNAMIC
Input Capacitance
Ciss
2100 2730
Output Capacitance
Coss VGS = 0V, VDS = 20V, f = 1MHz
360 450 pF
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 0.5V(BR)DSS, VGS = 10V, ID = 12A
VDS = 20V, RL = 1Ω
ID @ 12A, VGS = 10V, RGEN = 6Ω
330
43
6.3
5.5
6.8
18.0
26.5
8.7
415
11.2
28.8
42.5
15.8
nC
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = IS, VGS = 0V
1.7 A
1.4 V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 12A, dlF/dt = 100A / μS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
75 nS
55 nC
2Independent of operating temperature.
REV 1.1
2 2014-4-25


Part Number P0804BVG
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC
Total Page 5 Pages
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