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P06P03LVG Datasheet Preview

P06P03LVG Datasheet

P-Channel Enhancement Mode MOSFET

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P06P03LVG pdf
P06P03LVG
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
45mΩ @VGS = -10V
ID
-6A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
-6
-5
-30
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2.5
1.6
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
25
50
UNITS
°C / W
REV 1.2
1 2015/7/23



UNIKC
UNIKC

P06P03LVG Datasheet Preview

P06P03LVG Datasheet

P-Channel Enhancement Mode MOSFET

No Preview Available !

P06P03LVG pdf
P06P03LVG
P-Channel Logic Level Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±20V
-30
-0.9 -1.5 -3.0
±100
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
VDS = -24V, VGS = 0V
VDS = -20V, VGS = 0V , TJ = 125 °C
VDS = -5V, VGS = -10V
-30
1
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = -4.5V, ID = -5A
VGS = -10V, ID = -6A
VDS = -10V, ID = -6A
60 75
37 45
16
DYNAMIC
Input Capacitance
Ciss
530
Output Capacitance
Coss
VGS = 0V, VDS = -15V, f = 1MHz
135
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 0.5V(BR)DSS, VGS = -10V,
ID = -6A
VDS = -15V, RL= 1Ω
ID@ -1A, VGS = -10V, RGS = 6Ω
70
10 14
2.2
2
5.7
10
18
5
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TA = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = -6A, VGS = 0V
-2.1
-1.2
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = -5A, dlF/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
15.5
7.9
2Independent of operating temperature.
UNIT
V
nA
mA
A
S
pF
nC
nS
A
V
nS
nC
REV 1.2
2 2015/7/23


Part Number P06P03LVG
Description P-Channel Enhancement Mode MOSFET
Maker UNIKC
Total Page 8 Pages
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