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P06P03LCGA Datasheet Preview

P06P03LCGA Datasheet

P-Channel Enhancement Mode MOSFET

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P06P03LCGA pdf
P06P03LCGA
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
45mΩ @VGS = -10V
ID
-4A
SOT-89
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
-4
-3
-20
Avalanche Current
IAS -19
Avalanche Energy
L = 0.1mH
EAS
18
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
1.34
0.86
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
18
93
UNITS
°C / W
REV 1.0
1 2014/12/10



UNIKC
UNIKC

P06P03LCGA Datasheet Preview

P06P03LCGA Datasheet

P-Channel Enhancement Mode MOSFET

No Preview Available !

P06P03LCGA pdf
P06P03LCGA
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±20V
-30
-1 -1.5 -3
±100
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
VDS = -24V, VGS = 0V
VDS = -20V, VGS = 0V , TJ = 125 °C
VDS = -10V, VGS = -10V
-20
-1
-10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = -4.5V, ID = -3A
VGS = -10V, ID = -3.5A
VDS = -10V, ID = -3.5A
62 75
39 45
11
DYNAMIC
Input Capacitance
Ciss
557
Output Capacitance
Coss
VGS = 0V, VDS = -15V, f = 1MHz
101
Reverse Transfer Capacitance
Crss
90
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 0V, f = 1MHz
VDS = -15V, VGS = -10V,
ID = -3.5A
VDS = -15V,
ID @ -3.5A, VGS = -10V, RGS = 6Ω
10
13
1.6
3.9
5.7
10
18
5
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = -1A, VGS = 0V
-4
-1.2
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = -3.5A, dlF/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
15.5
7.9
2Independent of operating temperature.
UNITS
V
nA
mA
A
S
pF
Ω
nC
nS
A
V
nS
nC
REV 1.0
2 2014/12/10


Part Number P06P03LCGA
Description P-Channel Enhancement Mode MOSFET
Maker UNIKC
Total Page 5 Pages
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