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P0610BT Datasheet Preview

P0610BT Datasheet

N-Channel Enhancement Mode MOSFET

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P0610BT pdf
P0610BT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
6.5mΩ @VGS = 10V
ID2
120A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuous Drain Current2
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
120
76
375
Avalanche Current
IAS 39
Avalanche Energy
L = 1mH
EAS 770
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
208
83
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Package limitation current is 110A.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM UNITS
0.6
°C / W
62.5
REV 1.0
1 2017/1/13



UNIKC
UNIKC

P0610BT Datasheet Preview

P0610BT Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

P0610BT pdf
P0610BT
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
100
1.3 1.8 2.3
V
±100 nA
Zero Gate Voltage Drain Current
IDSS
VDS = 80V, VGS = 0V
VDS = 80V, VGS = 0V , TJ = 125 °C
1
mA
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 20A
VGS = 10V, ID = 20A
VDS = 10V, ID = 20A
5.8 8
5.3 6.5
140 S
DYNAMIC
Input Capacitance
Ciss
6188
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
747 pF
Reverse Transfer Capacitance
Gate Resistance
Crss
Rg
VGS = 0V, VDS = 0V, f = 1MHz
233
1.26 Ω
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg(VGS=10V)
Qg(VGS=4.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 50V,ID = 20A
VDD = 50V,
ID @ 20A, VGS = 10V, RGEN = 6Ω
121
64.2
nC
15.8
30
20
60
nS
55
57
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 20A, VGS = 0V
120 A
1.2 V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 20A, dls/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
58 nS
136 nC
2Independent of operating temperature.
3Package limitation current is 110A.
REV 1.0
2 2017/1/13


Part Number P0610BT
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC
Total Page 8 Pages
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