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P0603BV Datasheet Preview

P0603BV Datasheet

N-Channel Enhancement Mode MOSFET

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P0603BV pdf
P0603BV
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 6mΩ @VGS = 10V
ID
16A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
16
13
70
Avalanche Current
IAS 48
Avalanche Energy
L = 0.1mH
EAS
113
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2.5
1.6
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
TYPICAL MAXIMUM UNITS
50 °C / W
Ver 1.0
1 2012/5/16



UNIKC
UNIKC

P0603BV Datasheet Preview

P0603BV Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

P0603BV pdf
P0603BV
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNIT
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V , TJ = 55 °C
VGS = 4.5V, ID = 14A
VGS = 10V, ID = 17A
VDS = 10V, ID = 17A
30
1 1.6 3.0
V
±100 nA
1
mA
10
6.2 12
4.6 6
80 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Ciss
Coss
Crss
Rg
VGS = 0V, VDS = 15V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
2410
567
351
1.3
pF
Ω
Total Gate Charge2
Gate-Source Charge2
Qg
VGS=10V
VGS=4.5V
Qgs
VDS = 0.5V(BR)DSS, VGS = 10V,
ID = 17A
50
25
nC
7
Gate-Drain Charge2
Qgd
10
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
td(on)
tr
td(off)
VDS = 15V,RL=15Ω
ID @ 1A, VGS = 10V, RGEN = 6Ω
10
9
nS
45
Fall Time2
tf
10
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TA = 25 °C)
Forward Voltage1
VSD IF = 17A, VGS = 0V
1.2 V
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
trr
Qrr
IF = 17A, dI/dt=300A/ms
43 nS
32 nC
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
Ver 1.0
2 2012/5/16


Part Number P0603BV
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC
Total Page 5 Pages
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