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P0603BK Datasheet Preview

P0603BK Datasheet

N-Channel Enhancement Mode MOSFET

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P0603BK pdf
P0603BK
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 6mΩ @VGS = 10V
ID
30A
PDFN 5*6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current2
TC = 25 °C(Package Limited)
TC = 25 °C(Silicon Limited)
ID
30
80
Pulsed Drain Current1
TC = 100 °C
50
IDM 150
Continuous Drain Current2
TA = 25 °C
TA = 70 °C
16
ID 13
Avalanche Current
IAS 47
Avalanche Energy
L = 0.1mH
EAS 112
Power Dissipation
TC = 25 °C
TC = 100 °C
62.5
PD 25
Power Dissipation
TA = 25 °C
TA = 70 °C
2.5
PD 1.6
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed
SYMBOL
RqJC
RqJA
Ver 1.0
1
TYPICAL
MAXIMUM
2
50
UNITS
°C / W
2012/4/16



UNIKC
UNIKC

P0603BK Datasheet Preview

P0603BK Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

P0603BK pdf
P0603BK
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±30V
VDS = 24V, VGS = 0V , TJ = 25 °C
VDS = 20V, VGS = 0V , TJ = 55 °C
VGS = 4.5V, ID = 15A
VGS = 10V, ID = 30A
VDS = 15V, ID = 17A
30
1 1.6 3
±100
1
10
5.4 9
3.8 6
50
DYNAMIC
Input Capacitance
Ciss
Output Capacitance
Coss VGS = 0V, VDS = 15V, f = 1MHz
Reverse Transfer Capacitance
Crss
2160
474
309
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
1.4
Total Gate Charge2
Qg
39
Gate-Source Charge2
Qgs VDD = 15V, ID = 30A, VGS = 10V
10
Gate-Drain Charge2
Qgd
6
Turn-On Delay Time2
td(on)
26
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = 15V, ID = 10A, RG= 6Ω
18
40
Fall Time2
tf
16
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
Reverse Recovery Time
VSD IF =30A, VGS = 0V
trr IF = 10 A, dlF/dt = 100A /μS
35
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
2
1.2
UNIT
V
nA
mA
mΩ
S
pF
Ω
nC
nS
A
V
nS
Ver 1.0
2 2012/4/16


Part Number P0603BK
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC
Total Page 5 Pages
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