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P0603BDB Datasheet Preview

P0603BDB Datasheet

N-Channel Enhancement Mode MOSFET

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P0603BDB pdf
P0603BDB
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 5.8mΩ @VGS = 10V
ID
72A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current2
Pulsed Drain Current1
TC= 25 °C
TC= 100 °C
ID
IDM
72
46
160
Avalanche Current
IAS 50
Avalanche Energy
L=0.1mH
EAS
126
Power Dissipation
TC= 25 °C
TC= 100°C
PD
55
22
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
1Pulse width limited by maximum junction temperature.
2Package limitation current is 55A.
SYMBOL
RqJC
TYPICAL
MAXIMUM UNITS
2.3 °C / W
REV 1.0
1 2014/4/30



UNIKC
UNIKC

P0603BDB Datasheet Preview

P0603BDB Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

P0603BDB pdf
P0603BDB
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current1
ID(ON)
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS =24V, VGS = 0V
VDS =20V, VGS = 0V, TJ = 125°C
VDS = 10V, VGS = 10V
30
1 1.6
3
V
±100 nA
1
mA
10
160 A
Drain-Source On-State
Resistance1
RDS(ON)
VGS =4.5V, ID =20A
VGS =10V, ID =20A
5.4 9
3.5 5.8
Forward Transconductance1
gfs
VDS =5V, ID =20A
54 S
DYNAMIC
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = 15V, f = 1MHz
3160
363
pF
Reverse Transfer Capacitance
Crss
328
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
1.6 Ω
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 15V, VGS = 10V,
ID = 20A
VDS = 15V ,
ID20A, VGS = 10V, RGEN =6Ω
68
11 nC
18
54
45
nS
135
36
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
72 A
Forward Voltage1
VSD IF = 20A, VGS = 0V
1.3 V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 20A, dlF/dt = 100A /ms
20 nS
7 nC
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Package limitation current is 55A.
REV 1.0
2 2014/4/30


Part Number P0603BDB
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC
Total Page 5 Pages
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