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P0550AD Datasheet Preview

P0550AD Datasheet

N-Channel Enhancement Mode MOSFET

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P0550AD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
500V
1.5Ω @VGS = 10V
ID
5A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current2
Pulsed Drain Current1 , 2
Avalanche Current
Avalanche Energy
Power Dissipation
TC = 25 °C
TC = 100 °C
L = 10mH
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
IAS
EAS
PD
500
±30
5
3
15
5
128
89
36
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM UNITS
1.4
62.5 °C / W
Ver 1.0
1 2012/4/16
Free Datasheet http://www.datasheet4u.com/



UNIKC
UNIKC

P0550AD Datasheet Preview

P0550AD Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

P0550AD pdf
P0550AD
N-Channel Enhancement Mode MOSFET
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS
VGS = 0V, ID = 250mA
500
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250mA
2.5
4.5
Gate-Body Leakage
IGSS VDS = 0V, VGS = ±30V
±100
Zero Gate Voltage Drain Current IDSS
VDS = 500V, VGS = 0V , TC = 25 °C
VDS = 500V, VGS = 0V , TC = 100 °C
25
250
Drain-Source On-State
FRoerswisatradncTera1 nsconductance1
RDS(ON)
gfs
VGS = 10V, ID = 2.5A
VDS = 10V, ID = 2.5A
1.35 1.5
4
DYNAMIC
Input Capacitance
Ciss
691
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
93
Reverse Transfer Capacitance
Crss
12
Total Gate Charge2
Qg
12.1
Gate-Source Charge2
Qgs VDD = 250V, ID = 2.5A, VGS = 10V
3.7
Gate-Drain Charge2
Qgd
3.6
Turn-On Delay Time2
td(on)
13
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = 250V, ID = 2.5A, RG=25Ω
22
28
Fall Time2
tf
20
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF =5A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 5A, dlF/dt = 100A / ms
1450
10
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
5
1.5
UNIT
V
nA
mA
Ω
S
pF
nC
nS
A
V
nS
uC
Ver 1.0
2 2012/4/16
Free Datasheet http://www.datasheet4u.com/


Part Number P0550AD
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC
Total Page 5 Pages
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