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P0260ETF Datasheet Preview

P0260ETF Datasheet

N-Channel Enhancement Mode MOSFET

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P0260ETF pdf
P0260ETF
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
4.3Ω @VGS = 10V
ID
2A
TO-220F
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 600
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current1,2
Avalanche Current3
Avalanche Energy3
TC = 25 °C
TC = 100 °C
ID
IDM
IAS
EAS
2
1.3
8
2
20
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
29
11
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
3VDD = 50V , L = 10mH ,starting TJ = 25˚C
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
4.3
62.5
UNITS
°C / W
REV 1.1
1 2015/6/29



UNIKC
UNIKC

P0260ETF Datasheet Preview

P0260ETF Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

P0260ETF pdf
P0260ETF
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±30V
600
234
±100
Gate Voltage Drain Current
IDSS
VDS = 600V, VGS = 0V , TC = 25 °C
VDS = 480V, VGS = 0V , TC = 100 °C
1
10
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 10V, ID = 1A
3.4 4.3
Forward Transconductance1
gfs
VDS = 15V, ID = 2A
4
DYNAMIC
Input Capacitance
Ciss
322
Output Capacitance
Coss
VGS = 0V, VDS = 25V, f = 1MHz
41
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDD = 480V, VGS = 10V,
ID = 2A
VGS = 10V, ID = 2A,
VDD = 300V, RG = 25Ω
9
10.7
1.4
4.8
30
61
59
67
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 2A, VGS = 0V
2
1.5
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 2A,dlF/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
295
1.2
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
UNITS
V
nA
mA
Ω
S
pF
nC
nS
A
V
nS
uC
REV 1.1
2 2015/6/29


Part Number P0260ETF
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC
Total Page 8 Pages
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