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P0260AT Datasheet Preview

P0260AT Datasheet

N-Channel Enhancement Mode MOSFET

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P0260AT pdf
P0260AT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
4.4Ω @VGS = 10V
ID
2.8A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
2.8
1.8
3.5
Avalanche Energy
EAS 5
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
96
38
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
3VDD = 50V , L = 10mH ,starting TJ = 25°C
SYMBOL
RqJC
TYPICAL
MAXIMUM UNITS
1.3 °C / W
Ver 1.0
1 2012/4/16



UNIKC
UNIKC

P0260AT Datasheet Preview

P0260AT Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

P0260AT pdf
P0260AT
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS
VGS = 0V, ID = 250mA
600
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250mA
2.5 3.5 4.5
Gate-Body Leakage
IGSS VDS = 0V, VGS = ±20V
±100
Zero Gate Voltage Drain Current
IDSS
VDS = 600V, VGS = 0V
VDS = 480V, VGS = 0V , TJ = 125 °C
1
10
Drain-Source On-State
FRoerswisatradncTera1 nsconductance1
RDS(ON)
gfs
VGS = 10V, ID = 1A
VDS = 10V, ID = 1A
4.2 4.4
1.4
DYNAMIC
Input Capacitance
Ciss
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge2
Qg
Gate-Source Charge2
Qgs VDS = 480V, VGS = 10V, ID = 2A
Gate-Drain Charge2
Qgd
Turn-On Delay Time2
td(on)
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = 300V, ID @ 1A,
VGS = 10V, RGEN = 6Ω
Fall Time2
tf
332
28
6
11
3
7
15
45
35
60
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 1A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 1A, dlF/dt = 100A / μS
247
652
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
2.8
1.5
UNIT
V
nA
mA
Ω
S
pF
nC
nS
A
V
nS
nC
Ver 1.0
2 2012/4/16


Part Number P0260AT
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC
Total Page 5 Pages
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