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TC1301 Datasheet Preview

TC1301 Datasheet

Low Noise and Medium Power GaAs FETs

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TC1301 pdf
TC1301
REV.2_04/12/2004
FEATURES
Low Noise and Medium Power GaAs FETs
Low Noise Figure:
NF = 0.8 dB Typical at 12 GHz
www.DataSheeHt4iUg.hcoAm ssociated Gain:
Ga = 10 dB Typical at 12 GHz
High Dynamic Range:
1 dB Compression Power P-1 = 24 dBm at 12 GHz
Breakdown Voltage:
BVDGO 9 V
Lg = 0.25 µm, Wg = 600 µm
All-Gold Metallization for High Reliability
100 % DC Tested
PHOTO ENLARGEMENT
DESCRIPTION
The TC1301 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very
low noise figure, high associated gain and high dynamic range. The device can be used in circuits up to 40
GHz and suitable for low noise and medium power amplifier applications including a wide range of
commercial and military applications. All devices are 100% DC tested to assure consistent quality. All bond
pads are gold plated for either thermo-compression or thermo-sonic wire bonding.
ELECTRICAL SPECIFICATIONS (TA=25 °C)
Symbol
CONDITIONS
NF Noise Figure at VDS = 4 V, IDS = 50 mA, f = 12GHz
Ga Associated Gain at VDS = 4 V, IDS = 50 mA, f = 12GHz
P1dB Output Power at 1dB Gain Compression Point , f = 12GHz
VDS = 6 V, IDS = 80 mA
GL Linear Power Gain, f = 12GHz
VDS = 6 V, IDS = 80 mA
IDSS
gm
VP
BVDGO
Rth
Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V
Transconductance at VDS = 2 V, VGS = 0 V
Pinch-off Voltage at VDS = 2 V, ID = 1.2 mA
Drain-Gate Breakdown Voltage at IDGO =0.3 mA
Thermal Resistance
MIN
9
10
9
TYP
0.8
10
24
11
180
200
-1.0*
12
22
MAX
1.0
UNIT
dB
dB
dBm
dB
mA
mS
Volts
Volts
°C/W
* For the tight control of the pinch-off voltage range, we divide TC1301 into 3 model numbers to fit customer design requirement
(1)TC1301P0710 : Vp = -0.7V to -1.0V (2)TC1301P0811 : Vp = -0.8V to -1.1V (3)TC1301P0912 : Vp = -0.9V to -1.2V
If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for
details.
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
P1/6



Transcom
Transcom

TC1301 Datasheet Preview

TC1301 Datasheet

Low Noise and Medium Power GaAs FETs

No Preview Available !

TC1301 pdf
TC1301
REV.2_04/12/2004
ABSOLUTE MAXIMUM RATINGS (TA=25 °C)
Symbol
Parameter
Rating
VDS
VGS
IDS
IGS
Pin
www.DataSheet4U.coPmT
TCH
TSTG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Gate Current
RF Input Power, CW
Continuous Dissipation
Channel Temperature
Storage Temperature
7.0 V
-3.0 V
IDSS
600 µA
20 dBm
800 mW
175 °C
- 65 °C to +175 °C
TYPICAL NOISE PARAMETERS (TA=25 °C)
VDS = 4 V, IDS = 50 mA
Frequency NFopt
GA
Γopt Rn/50
MAG ANG
2 0.36 19.7 0.88 15 0.28
4 0.48 16.6 0.74 39 0.18
6 0.59 14.3 0.62 64 0.15
8 0.70 12.7 0.55 92 0.12
10 0.78 11.7 0.50 120 0.09
12 0.85 10.9 0.49 148 0.06
14 0.98 10.4 0.50 174 0.04
16 1.12 9.8 0.51 -162 0.04
18 1.27 9.0 0.54 -141 0.07
CHIP DIMENSIONS
760± 12
DD D
SG
S
G
SG
S
290± 12
Units: Micrometers
Chip Thickness: 100
Gate Pad: 75 x 70
Drain Pad: 80 x 70
Source Pad: 75 x 80
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
P2/6


Part Number TC1301
Description Low Noise and Medium Power GaAs FETs
Maker Transcom
Total Page 6 Pages
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