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Toshiba Electronic Components Datasheet

TPD1045F Datasheet

Silicon Monolithic Power MOS Integrated Circuit

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TPD1045F pdf
TPD1045F
Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit
TPD1045F
Low-Side Power Switch for Motor, Solenoid and Lamp Drive
The TPD1045F is a low-side power switch.
The IC has a vertical MOSFET output which can be directly
driven from a CMOS or TTL logic circuit (e.g., an MPU). The IC
is equipped with intelligent self-protection functions.
Features
A monolithic power IC with a new structure combining a
control block and a vertical power MOSFET (L2-π-MOS) on
single chip.
Can directly drive a power load from a CMOS or TTL logic.
Built-in protection circuits against overvoltage (active clamp),
Over temperature (thermal shutdown), and overcurrent
(switching mode).
Low Drain-Source ON-resistance: RDS (ON) = 100 mΩ (max)
(@VIN = 5 V, ID = 2 A, Tch = 25°C)
8-pin SOP package with embossed-tape packing.
SOP8-P-1.27A
Weight: 0.08 g (typ.)
Pin Assignment (top view)
SOURCE 1
SOURCE 2
SOURCE 3
IN 4
(TOP VIEW)
8 DRAIN
7 DRAIN
6 DRAIN
5 DRAIN
Marking
TPD1045
F
Part No. (or abbreviation code)
Lot No.
(weekly code)
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Note 1: Due to its MOS structure, this product is sensitive to static electricity.
1
2006-10-31


Toshiba Electronic Components Datasheet

TPD1045F Datasheet

Silicon Monolithic Power MOS Integrated Circuit

No Preview Available !

TPD1045F pdf
Block Diagram
IN
SOURCE
Over temperature
detection/protection
Over current
detection/protection
TPD1045F
DRAIN
Pin Description
Pin No.
1, 2, 3
4
5 ,6, 7, 8
Symbol
Pin Description
SOURCE
IN
DRAIN
Source (ground) pin
Input pin.
This pin is connected to a pull-down resistor internally, so that even when input wiring is
open-circuited, output can never be turned on inadvertently.
Drain pin.
When the load is short circuited and current in excess of the detection current (10A min) flows to
the drain (output) pin, the drain (output) automatically turns on or off.
Timing Chart
Input Signal
VIN
Overcurrent detection
(Load short circuit)
Over temperature
detection
Drain to source Voltage
VDS
Drain Current
ID
VDD
Normal
Over temperature detection
Over temperature recovery
VCL(DSS)
Inductive load
Over current protection
Thermal shutdown
(Note 2)
Note 2: The overheating detector circuits feature hysteresis. After overheating is detected, normal operation is
restored only when the channel temperature falls by the hysteresis amount (10°C typ.) in relation to the
overheating detection temperature.
2 2006-10-31


Part Number TPD1045F
Description Silicon Monolithic Power MOS Integrated Circuit
Maker Toshiba Semiconductor
Total Page 9 Pages
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