| Description | TPCP8101 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III) www.DataSheet4U.com TPCP8101 Notebook PC Applications Portable Equipment Applications • • • • • Small footprint due to small and thin package 2.4±0.1 0.475 1 4 Unit: mm 0.33±0.05 0.05 M A 8 5 High forward transfer admittance: |Yfs| = 14 S (typ.) Low leakage current: IDSS = -10 μA (max) (VDS = -20 V) Enhancement mode... |
| Features |
in 6. Drain 7. Drain 8. Drain
Drain power dissipation Drain power dissipation
JEDEC JEITA TOSHIBA
⎯ ⎯ 2-3V1K
Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy Channel temperature Storage temperature range
Weight: 0.017 g (typ.)
Note: For Notes 1 to 5, refer to the next page.
Using continuously under heavy lo...
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| Datasheet |
 TPCP8101 Datasheet - 250.76KB |
