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Toshiba Electronic Components Datasheet

M10LZ47 Datasheet

SM10LZ47

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M10LZ47 pdf
SM10LZ47
TOSHIBA BIDIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM10LZ47
AC POWER CONTROL APPLICATIONS
l Repetitive Peak OffState Voltage : VDRM = 800V
l R.M.S. OnState Current
: IT (RMS) = 10A
l High Commutation (dv / dt)
l Isolation Voltage
: VISOL = 1500V AC
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MAXIMUM RATINGS
CHARACTERISTIC
SYMBOL
RATING
Repetitive Peak OffState Voltage
R.M.S OnState Current
(Full Sine Waveform)
Peak One Cycle Surge OnState
Current (NonRepetitive)
I2t Limit Value
Critical Rate of Rise of OnState
Current
(Note)
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Voltage
Peak Gate Current
Junction Temperature
Storage Temperature Range
Isolation Voltage (AC, t = 1min.)
VDRM
IT (RMS)
ITSM
I2t
di / dt
PGM
PG (AV)
VFGM
IGM
Tj
Tstg
VISOL
800
10
100 (50Hz)
110 (60Hz)
50
50
5
0.5
10
2
40~125
40~125
1500
Note:
di / dt test condition
VDRM = 0.5 × Rated, ITM 15A, tgw 10µs,
tgr 250ns, igp = IGT × 2.0
UNIT
V
A
A
A2s
A / µs
W
W
V
A
°C
°C
V
Unit: mm
JEDEC
JEITA
TOSHIBA
Weight: 1.7g
1310H1A
1 2001-07-10


Toshiba Electronic Components Datasheet

M10LZ47 Datasheet

SM10LZ47

No Preview Available !

M10LZ47 pdf
SM10LZ47
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
Repetitive Peak OffState Current
Gate Trigger Voltage
Gate Trigger Current
Peak OnState Voltage
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Gate NonTrigger Voltage
Holding Current
Thermal Resistance
I
II
III
I
II
III
Critical Rate of Rise of OffState Voltage
Critical Rate of Rise of OffState Voltage
at Commutation
SYMBOL
TEST CONDITION
MIN TYP. MAX UNIT
IDRM
VDRM = Rated
― ― 20 µA
VGT
VD = 12V,
RL = 20
T2 (+) , Gate (+) ― ― 1.5
T2 (+) , Gate () ― ― 1.5 V
T2 () , Gate () ― ― 1.5
IGT
VD = 12V,
RL = 20
T2 (+) , Gate (+) ― ― 30
T2 (+) , Gate () ― ― 30 mA
T2 () , Gate () ― ― 30
VTM
ITM = 15A
― ― 1.5 V
VGD
VD = Rated, Tc = 125°C
0.2 ― ― V
IH VD = 12V, ITM = 1A
― ― 50 mA
Rth (jc)
dv / dt
Junction to Case, AC
VDRM = 600V, Tj = 125°C
Exponential Rise
― ― 3.4 °C / W
300 V / µs
(dv / dt) c
VDRM = 400V, Tj = 125°C
(di / dt) c = 5.5A / ms
10 ― ― V / µs
MARKING
NUMBER
SYMBOL
*1 TOSHIBA PRODUCT MARK
*2 TYPE
SM10LZ47
MARK
M10LZ47
Example
*3
8A: January 1998
8B: February 1998
8L: December 1998
2 2001-07-10


Part Number M10LZ47
Description SM10LZ47
Maker Toshiba Semiconductor
Total Page 3 Pages
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