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Toshiba Electronic Components Datasheet

J464 Datasheet

2SJ464

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J464 pdf
2SJ464
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-π-MOSV)
2SJ464
Chopper Regulator, DC-DC Converter and Motor Drive
Applications
Unit: mm
4-V gate drive
Low drain-source ON resistance: RDS (ON) = 64 m(typ.)
High forward transfer admittance: |Yfs| = 15 S (typ.)
Low leakage current: IDSS = 100 μA (max) (VDS = 100 V)
Enhancement mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
100
100
±20
18
72
45
937
18
4.5
150
55~150
V
V
V
A
W
mJ
A
mJ
°C
°C
JEDEC
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
2.78
62.5
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = −50 V, Tch = 25°C (initial), L = 3.56 mH, RG = 25 Ω, IAR = −18 A
Note 3: Repetitive rating: pulse width limited by maximum junction temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
1 2009-09-29
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Toshiba Electronic Components Datasheet

J464 Datasheet

2SJ464

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J464 pdf
Electrical Characteristics (Ta = 25°C)
2SJ464
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Symbol
Test Condition
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
Yfs
Ciss
Crss
Coss
VGS = ±16 V, VDS = 0 V
VDS = −100 V, VGS = 0 V
ID = −10 mA, VGS = 0 V
VDS = −10 V, ID = −1 mA
VGS = −10 V, ID = −9 A
VGS = −4 V, ID = −9 A
VDS = −10 V, ID = −9 A
VDS = −10 V, VGS = 0 V, f = 1 MHz
Min
100
0.8
7
Typ.
64
85
15
2900
480
1000
Max
±10
100
2.0
90
120
Unit
μA
μA
V
V
mΩ
S
pF
pF
pF
tr
0V
VGS
ton 10 V
tf
25
ID = −9 A VOUT
45
ns
VDD ∼− 50 V
25
toff Duty <= 1%, tw = 10 μs
170
Qg
140
nC
Qgs
VDD ∼− 80 V, VGS = −10 V, ID = −18 A
90
nC
Qgd 50 nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = −18 A, VGS = 0 V
IDR = −18 A, VGS = 0 V
dIDR/dt = 50 A/μs
Min Typ. Max Unit
⎯ ⎯ −18 A
⎯ ⎯ −72 A
⎯ ⎯ 1.7 V
220
ns
0.97
μC
Marking
J464
Part No. (or abbreviation code)
Lot No.
Note 4
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2 2009-09-29
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Toshiba Electronic Components Datasheet

J464 Datasheet

2SJ464

No Preview Available !

J464 pdf
20
Common source
Tc = 25°C
Pulse test
16
ID – VDS
10
8
6
4.5
12
4
3.5
3
8
2.5
4
VGS = −2 V
0
0
0.4
0.8
1.2
1.6
2.0
Drain-source voltage VDS (V)
2SJ464
50
10
8
40
30
ID – VDS
6
5
4.5
4
Common source
Tc = 25°C
Pulse test
20
10
0
0
3.5
3
VGS = −2.5 V
4 8 12 16
Drain-source voltage VDS (V)
20
20
Common source
VDS = −10 V
Pulse test
16
ID – VGS
12
8
4 25
100 Tc = −55°C
0
0 1 2 3 4
Gate-source voltage VGS (V)
5
VDS – VGS
3.0
Common source
2.5
Tc = 25°C
Pulse test
2.0
1.5
1.0
0.5
ID = −18 A
9
4.5
0
0 2 4 6 8 10 12 14 16
Gate-source voltage VGS (V)
Yfs– ID
100 Common source
VDS = −10 V
Pulse test
50
Tc = −55°C
25
30
100
10
5
3
1
1
3 5
10
30 50 100
Drain current ID (A)
RDS (ON) – ID
0.3
Common source
Tc = 25°C
Pulse test
0.1
VGS = −4
0.05
10 V
0.03
0.01
1
3 5
10 30 50
Drain current ID (A)
100
3 2009-09-29
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Part Number J464
Description 2SJ464
Maker Toshiba Semiconductor
Total Page 6 Pages
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