http://www.www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf



Toshiba Electronic Components Datasheet

J380 Datasheet

2SJ380

No Preview Available !

J380 pdf
www.DataSheet.co.kr
2SJ380
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-π-MOSV)
2SJ380
Relay Drive, DC-DC Converter and Motor Drive
Applications
Unit: mm
4-V gate drive
Low drain-source ON resistance: RDS (ON) = 0.15 (typ.)
High forward transfer admittance: |Yfs| = 7.7 S (typ.)
Low leakage current: IDSS = 100 μA (max) (VDS = 100 V)
Enhancement mode: Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
100
100
±20
12
48
35
312
12
3.5
150
55~150
V
V
V
A
W
mJ
A
mJ
°C
°C
JEDEC
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
3.57
62.5
°C/W
°C/W
Note1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = −25 V, Tch = 25°C (initial), L = 2.94 mH, RG = 25 Ω, IAR = −12 A
Note 3: Repetitive rating: pulse width limited by maximum junction temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
1 2007-02-01
Datasheet pdf - http://www.DataSheet4U.net/



Toshiba Electronic Components Datasheet

J380 Datasheet

2SJ380

No Preview Available !

J380 pdf
www.DataSheet.co.kr
Electrical Characteristics (Tc = 25°C)
2SJ380
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Symbol
Test Condition
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
Yfs
Ciss
Crss
Coss
VGS = ±16 V, VDS = 0 V
VDS = −100 V, VGS = 0 V
ID = −10 mA, VGS = 0 V
VDS = −10 V, ID = −1 mA
VGS = −4 V, ID = −6 A
VGS = −10 V, ID = −6 A
VDS = −10 V, ID = −6 A
VDS = −10 V, VGS = 0 V, f = 1 MHz
Min
100
0.8
4.5
Typ.
0.25
0.15
7.7
1100
200
440
Max
±10
100
2.0
0.32
0.21
Unit
μA
μA
V
V
Ω
S
pF
pF
pF
tr
0V
VGS
ton 10 V
tf
18
ID = −6 A VOUT
30
ns
VDD ∼− 50 V
18
toff Duty <= 1%, tw = 10 μs
65
Qg
VDD ∼− 80 V, VGS = −10 V,
Qgs ID = −12 A
Qgd
48 nC
29 nC
19 nC
Source-Drain Ratings and Characteristics (Tc = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = −12 A, VGS = 0 V
IDR = −12 A, VGS = 0 V
dIDR/dt = 50 A/μs
Min Typ. Max Unit
⎯ ⎯ −12 A
⎯ ⎯ −48 A
⎯ ⎯ 1.7 V
160
ns
0.5 ⎯ μC
Marking
J380
Characteristics
indicator
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2007-02-01
Datasheet pdf - http://www.DataSheet4U.net/



Toshiba Electronic Components Datasheet

J380 Datasheet

2SJ380

No Preview Available !

J380 pdf
www.DataSheet.co.kr
2SJ380
5
Common source
Tc = 25°C
Pulse test
4
10
3
2
ID – VDS
4
8
6
3
2.5
1
VGS = −2 V
0
0
0.4
0.8
1.2
1.6
2.0
Drain-source voltage VDS (V)
20
Common source
Tc = 25°C
Pulse test
16
10
12
ID – VDS
8
6
4
3.5
8
3
4 2.5
VGS = −2 V
0
0 2 4 6 8 10
Drain-source voltage VDS (V)
10
Common source
VDS = −10 V
Pulse test
8
ID – VGS
25
Tc = −55°C
6 100
4
2
0
0 1 2 3 4 5 6
Gate-source voltage VGS (V)
VDS – VGS
3.2
Common source
Tc = 25°C
2.4
Pulse test
1.6
0.8
0
0
ID = −8 A
4
2
4 8 12 16
Gate-source voltage VGS (V)
20
Yfs– ID
30
Common source
VDS = −10 V
Pulse test
10
Tc = −55°C
5 100
3
25
1
0.3
1.0
3
10 20
Drain current ID (A)
RDS (ON) – ID
2.0
Common source
1.0
Tc = 25°C
Pulse test
0.5
0.3 VGS = −4 V
10
0.1
0.05
0.03
0.1
0.3
1.0
3
Drain current ID (A)
10 20
3 2007-02-01
Datasheet pdf - http://www.DataSheet4U.net/




Part Number J380
Description 2SJ380
Maker Toshiba Semiconductor
Total Page 6 Pages
PDF Download
J380 pdf
Download PDF File
J380 pdf
View for Mobile






Related Datasheet

1 J380 2SJ380 Toshiba Semiconductor
Toshiba Semiconductor
J380 pdf




Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components