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Toshiba Electronic Components Datasheet

J377 Datasheet

2SJ377

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J377 pdf
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2SJ377
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (L2−π−MOSV)
2SJ377
Relay Drive, DC/DC Converter and Motor Drive
Applications
z 4 V gate drive
z Low drain-source ON-resistance
: RDS (ON) = 0.16 (typ.)
z High forward transfer admittance
: |Yfs| = 4.0 S (typ.)
z Low leakage current : IDSS = 100 μA (max) (VDS = 60 V)
z Enhancement mode : Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
6.5 ± 0.2
5.2 ± 0.2
Unit: mm
0.6 MAX.
0.8 MAX.
0.6 ± 0.15
1
1.05 MAX.
23
1.1 ± 0.2
0.6 MAX.
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 k)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
60
60
±20
5
20
20
273
5
2
150
55 to 150
V
V
V
A
A
W
mJ
A
mJ
°C
°C
2.3 ± 0.15 2.3 ± 0.15
1. GATE
2. DRAIN
HEAT SINK
3. SOURSE
2
1
3
JEDEC
JEITA
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max Unit
Thermal resistance, channel to case
Rth (chc)
6.25 °C / W
Thermal resistance, channel to ambient
Rth (cha)
125 °C / W
Note 1:
Note 2:
Note 3:
Ensure that the channel temperature does not exceed 150°C.
VDD = 25 V, Tch = 25°C (initial), L = 14.84 mH, RG = 25 ,
IAR = 5 A
Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1 2010-02-05
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Toshiba Electronic Components Datasheet

J377 Datasheet

2SJ377

No Preview Available !

J377 pdf
www.DataSheet.co.kr
Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Symbol
Test Condition
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±16 V, VDS = 0 V
VDS = 60 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 4 V, ID = 2.5 A
VGS = 10 V, ID = 2.5 A
VDS = 10 V, ID = 2.5 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
Rise time
tr
Turn-on time
Switching time
Fall time
ton
tf
Turn-off time
Total gate charge (Gate-source
plus gate-drain)
Gate-source charge
Gate-drain (“Miller”) charge
toff
Qg
Qgs VDD ≈ −48 V, VGS = 10 V, ID = 5 A
Qgd
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 5 A, VGS = 0 V
IDR = 5 A, VGS = 0 V
dlDR / dt = 50 A / μS
Marking
2SJ377
Min
60
0.8
2.0
Typ.
0.24
0.16
4.0
630
95
290
Max
±10
100
2.0
0.28
0.19
Unit
μA
μA
V
V
S
pF
— 25 —
— 45 —
ns
— 55 —
— 200 —
— 22 —
— 16 —
—6—
nC
Min Typ. Max Unit
— — 5 A
— — 20 A
— — 1.7 V
— 80 — ns
— 0.1 — μC
J377
Part No.
Lot No.
Note 4
Note 4 : A line under a Lot No. identifies the indication of product Labels
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 2002/95/EC of the European Parliament and
of the Council of 27 January 2003 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment.
2 2010-02-05
Datasheet pdf - http://www.DataSheet4U.net/


Part Number J377
Description 2SJ377
Maker Toshiba Semiconductor
Total Page 6 Pages
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