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Toshiba Electronic Components Datasheet

D1509 Datasheet

2SD1509

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D1509 pdf
2SD1509
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor)
2SD1509
Micro-Motor Drive, Hammer Drive Applications
Switching Applications
Power Amplifier Applications
Unit: mm
High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 80 V
Collector-emitter voltage
VCEO 80 V
Emitter-base voltage
VEBO 8 V
Collector current
IC 2 A
Base current
IB 0.5 A
Collector power
dissipation
Ta = 25°C
Tc = 25°C
PC
1.5
W
10
JEDEC
JEITA
Junction temperature
Storage temperature range
Tj 150 °C
Tstg
55 to 150
°C
TOSHIBA
2-8H1A
Weight: 0.82 g (typ.)
Note1: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
COLLECTOR
BASE
≈ 4 kΩ
≈ 800 Ω
EMITTER
1 2009-12-21



Toshiba Electronic Components Datasheet

D1509 Datasheet

2SD1509

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D1509 pdf
Electrical Characteristics (Ta = 25°C)
2SD1509
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE
VCE (sat)
VBE (sat)
fT
Cob
VCB = 80 V, IE = 0
VEB = 8 V, IC = 0
IC = 10 mA, IB = 0
VCE = 2 V, IC = 1 A
IC = 1 A, IB = 1 mA
IC = 1 A, IB = 1 mA
VCE = 2 V, IC = 0.5 A
VCB = 10 V, IE = 0, f = 1 MHz
Min Typ. Max Unit
80
2000
100
20
10 μA
4 mA
V
1.5 V
2.0 V
MHz
pF
Turn-on time
Switching time Storage time
Fall time
ton
20 μs
Input IB1
Output
0.4
tstg IB2
VCC = 30 V
tf IB1 = 1 mA,IB2 = 1 mA,
duty cycle 1%
4.0
μs
0.6
Marking
Lot No.
D1509
Note2
Part No. (or abbreviation code)
Note2: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
2 2009-12-21



Toshiba Electronic Components Datasheet

D1509 Datasheet

2SD1509

No Preview Available !

D1509 pdf
500
300
1.6
IC – VCE
250 200
Common emitter
Tc = 25°C
180
170
0.8
165
IB = 160 μA
00
024 68
Collector-emitter voltage VCE (V)
VCE (sat) – IC
3
Common emitter
IC/IB = 1000
1 Tc = 55°C
25
100
0.5
0.3 0.5
1
3
Collector current IC (A)
5
2SD1509
10000
5000
3000
Common emitter
VCE = 2 V
hFE – IC
1000
500
300
Tc = 100°C 25
55
100
50
30
0.01
0.03 0.05 0.1
0.3 0.5 1
Collector current IC (A)
35
VBE (sat) – IC
5
Common emitter
IC/IB = 1000
3
Tc = 55°C
25
1
0.3
100
0.5 1
Collector current IC (A)
3
5
IC – VBE
Common emitter
VCE = 2 V
1.6
Tc = 100°C
25
0.8 55
0
0 0.8 1.6 2.4 3.2
Base-emitter voltage VBE (V)
16
12
(1)
8
PC – Ta
(1) Tc = Ta
Infinite heat sink
(2) No heat sink
4
(2)
0
0 40 80 120 160 200
Ambient temperature Ta (°C)
240
3 2009-12-21




Part Number D1509
Description 2SD1509
Maker Toshiba Semiconductor
Total Page 5 Pages
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