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Toshiba Electronic Components Datasheet

D1508 Datasheet

2SD1508

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D1508 pdf
2SD1508
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor)
2SD1508
Pulse Motor Drive, Hammer Drive Applications
Switching Applications
Power Amplifier Applications
Unit: mm
High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA)
Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
30
30
10
1.5
3.0
50
1.2
10
150
55 to 150
V
V
V
A
mA
W
°C
°C
JEDEC
JEITA
TOSHIBA
2-8H1A
Weight: 0.82 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
BASE
COLLECTOR
EMITTER
1 2006-11-21


Toshiba Electronic Components Datasheet

D1508 Datasheet

2SD1508

No Preview Available !

D1508 pdf
Electrical Characteristics (Ta = 25°C)
2SD1508
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE
VCE (sat)
VBE (sat)
VCB = 30 V, IE = 0
VEB = 10 V, IC = 0
IC = 10 mA, IB = 0
VCE = 2 V, IC = 150 mA
IC = 1 A, IB = 1 mA
IC = 1 A, IB = 1 mA
Min Typ. Max Unit
― ― 10 μA
― ― 10 μA
30 ― ―
V
4000
― ― 1.5 V
― ― 2.2 V
Turn-on time
Switching time Storage time
Fall time
ton
20 μs
Input
IB1
Output
0.18
tstg
IB2
0.6
μs
VCC 15 V
tf
IB1 = IB2 = 1 mA, duty cycle 1%
0.3
Marking
Lot No.
D1508
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
2 2006-11-21


Part Number D1508
Description 2SD1508
Maker Toshiba Semiconductor
Total Page 5 Pages
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D1508 pdf
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