| Description | TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK246 For Constant Current, Impedance Converter and DC-AC High Input Impedance Amplifier Circuit Applications 2SK246 Unit: mm · High breakdown voltage: VGDS = −50 V · High input impedance: IGSS = −1 nA (max) (VGS = −30 V) Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction ... |
| Features |
Hz
Ciss VDS = 10 V, VGS = 0, f = 1 MHz Crss VDG = 10 V, ID = 0, f = 1 MHz
Note: IDSS classification Y: 1.2~3.0 mA, GR: 2.6~6.5 mA, BL: 6~14 mA
Min Typ. Max Unit
¾ ¾ -1.0 nA
-50 ¾
¾
V
1.2 ¾ 14 mA
-0.7
¾ -6.0
V
1.5 ¾ ¾ mS
¾ 9.0 ¾ pF
¾ 2.5 ¾ pF
1 2003-03-25
2SK246
2 2003-03-25
2SK246
3 2003-03-25
2SK246
RESTRICTIONS ON PRODUCT USE
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| Datasheet |
 2SK246 Datasheet - 105.43KB |
