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2SB1015 Toshiba (https://www.toshiba.com/) Semiconductor Silicon PNP Transistor

Description : SILICON PNP TRIPLE DIFFUSED TYPE 1 2SB1015 AUDIO FREQUENCY POWER AMPLIFIE R APPLICATIONS. 10.3MAX. Unit in mm FEATURES . Low Collector Saturation Vol tage : VC E(sat)=-1.0V(Max.) at Ic=-3A, I B=-0.3A . Collector Power Dissipation : Pc=25W (Tc=25°C) . Complementary to 2SD1406 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Colle...
Features . Low Collector Saturation Vol tage : VC E(sat)=-1.0V(Max.) at Ic=-3A, I B=-0.3A . Collector Power Dissipation : Pc=25W (Tc=25°C) . Complementary to 2SD1406 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current SYMBOL VCBO VcEO VEBO ic RATING -60 -60 -7 -3 UNIT V V V A ...

Datasheet PDF File 2SB1015 Datasheet - 90.27KB

2SB1015  






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