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Toshiba Electronic Components Datasheet

1SS293 Datasheet

DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)

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1SS293 pdf
TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type
1SS293
Low Voltage High Speed Switching
Low forward voltage
Low reverse surrent
Small package
: VF (3) = 0.54V (typ.)
: IR = 5µA (max)
1SS293
Unit in mm
Maximum Ratings (Ta = 25°C)
Characteristic
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Power dissipation
Junction temperature
Storage temperature range
Symbol
VRM
VR
IFM
IO
P
Tj
Tstg
Rating
Unit
45 V
40 V
300 mA
100 mA
300 mW
JEDEC
125 °C EIAJ
55~125 °C TOSHIBA
Weight: 0.13g
SC61
23J1A
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
VF (1)
VF (2)
VF (3)
IR
CT
Test
Circuit
Test Condition
IF = 1mA
IF = 10mA
IF = 100mA
VR = 40V
VR = 0, f = 1MHz
Min Typ. Max Unit
0.28
0.36
V
0.54 0.60
― ― 5 µA
18 25 pF
961001EAA2
TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in
general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of
the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure
of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please
ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications.
Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook.
2000-09-11 1/2


Toshiba Electronic Components Datasheet

1SS293 Datasheet

DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)

No Preview Available !

1SS293 pdf
1SS293
961001EAA2’
The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or
others.
The information contained herein is subject to change without notice.
2000-09-11 2/2


Part Number 1SS293
Description DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)
Manufacturer Toshiba Semiconductor
Total Page 2 Pages
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