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Toshiba Electronic Components Datasheet

1SS201 Datasheet

DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)

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1SS201 pdf
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS201
Ultra High Speed Switching Application
Low forward voltage
: VF (3) = 0.9V (typ.)
Fast reverse recovery time : trr = 1.6ns (typ.)
Small total capacitance : CT = 0.9pF (typ.)
1SS201
Unit in mm
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
85 V
Reverse voltage
VR 80 V
Maximum (peak) forward current
IFM
300 (*)
mA
Average forward current
IO
100 (*)
mA
Surge current (10ms)
IFSM
2 (*)
A
Power dissipation
P 200 mW JEDEC
Junction temperature
Storage temperature range
Tj
Tstg
125 °C EIAJ
55~125
°C
TOSHIBA
Weight: 0.13g
14E2A
(*) Unit rating. Total rating = Unit rating ×1.5.
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
VF (1)
VF (2)
VF (3)
IR (1)
IR (2)
CT
trr
Test
Circuit
Test Condition
IF = 1mA
IF = 10mA
IF = 100mA
VR = 30V
VR = 80V
VR = 0, f = 1MHz
IF = 10mA (Fig.1)
Min Typ. Max Unit
0.60
0.72
V
0.90 1.20
― ― 0.1
µA
― ― 0.5
0.9 3.0 pF
1.6 4.0 ns
961001EAA2
TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in
general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of
the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure
of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please
ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications.
Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook.
The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or
others.
The information contained herein is subject to change without notice.
2000-09-11 1/2


Toshiba Electronic Components Datasheet

1SS201 Datasheet

DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)

No Preview Available !

1SS201 pdf
1SS201
Fig.1 Reverse recovery time (trr) test circuit
2000-09-11 2/2


Part Number 1SS201
Description DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)
Maker Toshiba Semiconductor
Total Page 2 Pages
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