| Description | TPCA8063-H MOSFETs Silicon N-Channel MOS (U-MOS-H) TPCA8063-H 1. Applications • • • High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features (1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 5.9 nC (typ.) Low drain-source on-resistance: RDS(ON) = 6.5 mΩ (typ.) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement ... |
| Features |
(1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 5.9 nC (typ.) Low drain-source on-resistance: RDS(ON) = 6.5 mΩ (typ.) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.3 mA)
3. Packaging and Internal Circuit
1, 2, 3: Source 4: Gate ...
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| Datasheet |
 TPCA8063-H Datasheet - 233.88KB |
