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Toshiba Electronic Components Datasheet

TC58BVG0S3HBAI6 Datasheet

1G-BIT (128M x 8 BIT) CMOS NAND E2PROM

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TC58BVG0S3HBAI6 pdf
TC58BVG0S3HBAI6
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
1 GBIT (128M × 8 BIT) CMOS NAND E2PROM
DESCRIPTION
The TC58BVG0S3HBAI6 is a single 3.3V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and
Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.
The device has a 2112-byte static register which allows program and read data to be transferred between the
register and the memory cell array in 2112-bytes increments. The Erase operation is implemented in a single block
unit (128 Kbytes + 4 Kbytes: 2112 bytes × 64 pages).
The TC58BVG0S3HBAI6 is a serial-type memory device which utilizes the I/O pins for both address and data
input/output as well as for command inputs. The Erase and Program operations are automatically executed making
the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still
cameras and other systems which require high-density non-volatile memory data storage.
The TC58BVG0S3HBAI6 has ECC logic on the chip and 8bit read errors for each 528Bytes can be corrected
internally.
FEATURES
Organization
x8
Memory cell array 2112 × 64K × 8
Register
2112× 8
Page size
2112 bytes
Block size
(128K + 4K) bytes
Modes
Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy,
ECC Status Read
Mode control
Serial input/output
Command control
Number of valid blocks
Min 1004 blocks
Max 1024 blocks
Power supply
VCC = 2.7V to 3.6V
Access time
Cell array to register 40 µs typ.
Serial Read Cycle
25 ns min (CL=50pF)
Program/Erase time
Auto Page Program
Auto Block Erase
330 µs/page typ.
2.5 ms/block typ.
Operating current
Read (25 ns cycle)
Program (avg.)
Erase (avg.)
Standby
30 mA max.
30 mA max
30 mA max
50 µA max
Package
P-VFBGA67-0608-0.80-001 (Weight: 0.095 g typ.)
8bit ECC for each 528Bytes is implemented on a chip.
1 2012-08-31C



Toshiba Electronic Components Datasheet

TC58BVG0S3HBAI6 Datasheet

1G-BIT (128M x 8 BIT) CMOS NAND E2PROM

No Preview Available !

TC58BVG0S3HBAI6 pdf
PIN ASSIGNMENT (TOP VIEW)
1 2 34567 8
A NC NC
NC NC NC
B NC WP ALE VSS CE WE RY/BY NC
C NC NC RE CLE NC NC NC NC
D NC NC NC NC NC NC
E NC NC NC NC NC NC
F NC NC NC NC NC NC
G NC I/O1 NC NC NC VCC
H NC NC I/O2 NC VCC I/O6 I/O8 NC
J NC VSS I/O3 I/O4 I/O5 I/O7 VSS NC
K NC NC NC
NC NC NC
PIN NAMES
I/O1 to I/O8
CE
WE
RE
CLE
ALE
WP
RY/BY
VCC
VSS
NC
I/O port
Chip enable
Write enable
Read enable
Command latch enable
Address latch enable
Write protect
Ready/Busy
Power supply
Ground
No Connection
TC58BVG0S3HBAI6
2 2012-08-31C



Toshiba Electronic Components Datasheet

TC58BVG0S3HBAI6 Datasheet

1G-BIT (128M x 8 BIT) CMOS NAND E2PROM

No Preview Available !

TC58BVG0S3HBAI6 pdf
BLOCK DIAGRAM
Data register 1
I/O1
to
I/O8
CE
CLE
ALE
WE
RE
WP
RY/BY
I/O
Control circuit
Logic control
RY / BY
ECC Logic
Status register
Address register
Command register
Control circuit
TC58BVG0S3HBAI6
VCC VSS
Column buffer
Column decoder
Data register 0
Sense amp
Memory cell array
HV generator
ABSOLUTE MAXIMUM RATINGS
SYMBOL
RATING
VCC Power Supply Voltage
VIN Input Voltage
VI/O
PD
TSOLDER
TSTG
TOPR
Input /Output Voltage
Power Dissipation
Soldering Temperature (10 s)
Storage Temperature
Operating Temperature
VALUE
0.6 to 4.6
0.6 to 4.6
0.6 to VCC + 0.3 (4.6 V)
0.3
260
55 to 125
-40 to 85
CAPACITANCE *(Ta = 25°C, f = 1 MHz)
SYMB0L
PARAMETER
CONDITION
CIN Input
VIN = 0 V
COUT
Output
VOUT = 0 V
* This parameter is periodically sampled and is not tested for every device.
MIN
MAX
10
10
UNIT
V
V
V
W
°C
°C
°C
UNIT
pF
pF
3 2012-08-31C




Part Number TC58BVG0S3HBAI6
Description 1G-BIT (128M x 8 BIT) CMOS NAND E2PROM
Maker Toshiba
Total Page 30 Pages
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