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Toshiba Electronic Components Datasheet

K161 Datasheet

2SK161

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K161 pdf
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK161
FM Tuner Applications
VHF Band Amplifier Applications
2SK161
Unit: mm
· Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz)
· High forward transfer admittance: |Yfs| = 9 mS (typ.)
· Extremely low reverse transfer capacitance: Crss = 0.1 pF (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
Symbol
VGDO
IG
PD
Tj
Tstg
Rating
-18
10
200
125
-55~125
Unit
V
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
JEDEC
JEITA
TOSHIBA
2-4E1D
Weight: 0.13 g (typ.)
Characteristics
Symbol
Test Condition
Gate leakage current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Power gain
Noise figure
IGSS
VGS = -0.5 V, VDS = 0
V (BR) GDO IG = -100 mA
IDSS
(Note)
VGS = 0, VDS = 10 V
VGS (OFF) VDS = 10 V, ID = 1 mA
ïYfsï
VGS = 0, VDS = 10 V, f = 1 kHz
Ciss
Crss
GPS
VDS = 10 V, VGS = 0, f = 1 MHz
VGD = -10 V, f = 1 MHz
VDD = 10 V, f = 100 MHz (Figure 1)
NF VDD = 10 V, f = 100 MHz (Figure 1)
Note: IDSS classification O: 1.0~3.0 mA, Y: 2.5~6.0 mA, GR: 5.0~10.0 mA
Min Typ. Max Unit
¾ ¾ -10 nA
-18 ¾
¾
V
1.0 ¾ 10 mA
-0.4
¾
¾
¾
¾
¾
¾
9
6.0
0.10
18
2.5
-4.0
¾
¾
0.15
¾
3.5
V
mS
pF
pF
dB
dB
1 2003-03-27


Toshiba Electronic Components Datasheet

K161 Datasheet

2SK161

No Preview Available !

K161 pdf
2SK161
L1: 0.8 mmf Ag plated Cu wire, 3 turns, 10 mm ID, 10 mm length.
L2: 0.8 mmf Ag plated Cu wire, 3 turns, 10 mm ID, 10 mm length.
Figure 1 100 MHz GPS, NF Test Circuit
2SK161 is measured at each group by changing RS
Group
2SK161-O
2SK161-Y
2SK161-GR
Rs (W)
0
18 W ± 5%
100 W ± 5%
2 2003-03-27


Part Number K161
Description 2SK161
Maker Toshiba
Total Page 6 Pages
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