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Toshiba Electronic Components Datasheet

D1411A Datasheet

2SD1411A

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D1411A pdf
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD1411A
High-Current Switching Applications
Power Amplifier Applications
2SD1411A
Unit: mm
Low saturation voltage: VCE (sat) = 0.5 V (max) at IC = 4 A
Complementary to 2SB1018A
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 100 V
Collector-emitter voltage
VCEO 80 V
Emitter-base voltage
VEBO 5 V
Collector current
IC 7 A
Base current
IB 1 A
Collector power
dissipation
Ta = 25°C
Tc = 25°C
PC
2.0
W
30
JEDEC
Junction temperature
Storage temperature range
Tj 150 °C
Tstg
55 to 150
°C
JEITA
TOSHIBA
2-10R1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 1.7 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-21


Toshiba Electronic Components Datasheet

D1411A Datasheet

2SD1411A

No Preview Available !

D1411A pdf
Electrical Characteristics (Tc = 25°C)
2SD1411A
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
VCB = 100 V, IE = 0
IEBO
VEB = 5 V, IC = 0
V (BR) CEO IC = 50 mA, IB = 0
hFE (1)
(Note)
VCE = 1 V, IC = 1 A
hFE (2)
VCE (sat)
VCE = 1 V, IC = 4 A
IC = 4 A, IB = 0.4 A
VBE (sat) IC = 4 A, IB = 0.4 A
fT VCE = 4 V, IC = 1 A
Cob VCB = 10 V, IE = 0, f = 1 MHz
Min Typ. Max Unit
― ― 5 μA
― ― 5 μA
80 ― ―
V
70 240
30 ― ―
0.25 0.5
V
0.9 1.4
V
10 MHz
200
pF
Turn-on time
ton
20 μs
Input IB1
Output
0.4
Switching time Storage time
tstg
IB2
Fall time
VCC = 30 V
tf
IB1 = IB2 = 0.3 A, duty cycle 1%
Note: hFE (1) classification O: 70 to 140, Y: 120 to 240
2.5
μs
0.5
Marking
D1411A
Characteristics
indicator
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2 2006-11-21


Part Number D1411A
Description 2SD1411A
Maker Toshiba
Total Page 5 Pages
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