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Toshiba Electronic Components Datasheet

C4541 Datasheet

2SC4541

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C4541 pdf
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4541
Power Amplifier Applications
Power Switching Applications
2SC4541
Unit: mm
Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1.5 A)
High speed switching time: tstg = 0.5 μs (typ.)
Small flat package
PC = 1.0 to 2.0 W (mounted on a ceramic substrate)
Complementary to 2SA1736
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
PC
(Note 1)
Tj
Tstg
80
50
6
3
0.6
500
1000
150
55 to 150
V
V
V
A
A
mW
mW
°C
°C
JEDEC
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
Note 1: Mounted on a ceramic substrate (250 mm2 × 0.8 t)
Note 2:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2009-12-21


Toshiba Electronic Components Datasheet

C4541 Datasheet

2SC4541

No Preview Available !

C4541 pdf
Electrical Characteristics (Ta = 25°C)
2SC4541
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat)
VBE (sat)
fT
Cob
VCB = 80 V, IE = 0
VEB = 6 V, IC = 0
IC = 10 mA, IB = 0
VCE = 2 V, IC = 100 mA
VCE = 2 V, IC = 2 A
IC = 1.5 A, IB = 75 mA
IC = 1.5 A, IB = 75 mA
VCE = 2 V, IC = 100 mA
VCB = 10 V, IE = 0, f = 1 MHz
Min Typ. Max Unit
― ― 0.1 μA
― ― 0.1 μA
50 ― ―
V
120 400
40 ― ―
― ― 0.5 V
― ― 1.2 V
100 MHz
20 pF
Turn-on time
Switching time
Storage time
Fall time
ton
OUTPUT
0.1
20 μs INPUT IB1
tstg
IB1 IB2
IB2 30 V
IB1 = 75 mA,IB2 = 75 mA
tf DUTY CYCLE 1%
0.5
μs
0.1
Marking
Part No. (or abbreviation code)
KD
Lot No.
Note 3
Note 3: A line to the right of a Lot No. identifies the indication of product Labels.
Without a line: [[Pb]]/INCLUDES > MCV
With a line: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
2 2009-12-21


Part Number C4541
Description 2SC4541
Maker Toshiba
Total Page 5 Pages
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