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  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

SFF1001G Datasheet

(SFF1001G - SFF1008G) Glass Passivated Super Fast Rectifiers

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SFF1001G THRU SFF1008G
Features
Isolation 10.0 AMPS. Glass Passivated Super Fast Rectifiers
Voltage Range
50 to 600 Volts
Current
10.0 Amperes
ITO-220AB
Low forward voltage drop
High current capability
High reliability
High surge current capability
Mechanical Data
.134(3.4)DIA
.11 3 ( 3 .0 )D I A
.272(6.9)
.248(6.3)
.112 (2 .85 )
.100(2.55)
.606(15.5)
.583(14.8)
Case: ITO-220AB molded plastic
Epoxy: UL 94V-O rate flame retardant
Terminals: Leads solderable per MIL-STD-
202, Method 208 guaranteed
Polarity: As marked
High temperature soldering guaranteed:
260oC/10 seconds.16”,(4.06mm) from
case.
Weight: 2.24 grams
Mounting torque: 5 in – 1bs. max.
. 11 0 (2 .8 )
.098(2.5)
.543(13.8)
.512(13.2)
PIN 1
PIN 3
PIN 2
Positive CT
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol SFF SFF SFF SFF SFF SFF SFF SFF Units
1001G 1002G 1003G 1004G 1005G 1006G 1007G 1008G
Maximum Recurrent Peak Reverse Voltage VRRM 50 100 150 200 300 400 500 600 V
Maximum RMS Voltage
VRMS 35 70 105 140 210 280 350 420 V
Maximum DC Blocking Voltage
VDC 50 100 150 200 300 400 500 600 V
Maximum Average Forward Rectified
Current .375 (9.5mm) Lead Length
@TC = 100
I(AV)
10.0
A
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
IFSM
125
A
Maximum Instantaneous Forward Voltage
@ 5.0A
VF
0.975
1.3 1.7 V
Maximum DC Reverse Current
@ TA=25at Rated DC Blocking Voltage
@ TA=100
IR
10.0 uA
400 uA
Maximum Reverse Recovery Time (Note 1) Trr
35 nS
Typical Junction Capacitance (Note 2)
Cj
70
50 pF
Typical Thermal Resistance (Note 3)
RθJC
2.0 /W
Operating Temperature Range
TJ
-65 to +150
Storage Temperature Range
TSTG
-65 to +150
Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-plate.
- 274 -


  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

SFF1001G Datasheet

(SFF1001G - SFF1008G) Glass Passivated Super Fast Rectifiers

No Preview Available !

SFF1001G pdf
www.DataSheet4U.com
RATINGS AND CHARACTERISTIC CURVES (SFF1001G THRU SFF1008G)
FIG.1- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W
NONINDUCTIVE
10W
NONINDUCTIVE
trr
+0.5A
(+)
50Vdc
(approx)
(-)
DUT
1W OSCILLOSCOPE
NON
(NOTE 1)
INDUCTIVE
(-)
PULSE
GENERATOR
(NOTE 2)
(+)
0
-0.25A
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
FIG.2- MAXIMUM FORWARD CURRENT DERATING
CURVE
20
-1.0A
1cm
SET TIME BASE FOR
5/ 10ns/ cm
FIG.3- TYPICAL REVERSE CHARACTERISTICS
1000
16
12 100
TJ=1000C
8
4
0
0 50 100
CASE TEMPERATURE. (oC)
150
FIG.4- MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT PER LEG
150
TJ=1250C
120
8.3ms Single Half Sine Wave
JEDEC Method
90
60
30
0
12
5 10
20
NUMBER OF CYCLES AT 60Hz
50 100
FIG.5- TYPICAL JUNCTION CAPACITANCE PER LEG
100
90
Tj=250C
80
70
60
50
40
12
5 10 20
50 100 200 500 1000
REVERSE VOLTAGE. (V)
10 TJ=750C
1
TJ=250C
0.1
0
20 40 60
80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.6- TYPICAL FORWARD CHARACTERISTICS
PER LEG
100
30
10
3
1
SFF1007G~SFF1008G
0.3
0.1
0.03
0.01
0.4
Tj=25oC
Pulse Width=300 s
1% Duty Cycle
0.6 0.8 1.0 1.2 1.4 1.6
FORWARD VOLTAGE. (V)
1.8
- 275 -


Part Number SFF1001G
Description (SFF1001G - SFF1008G) Glass Passivated Super Fast Rectifiers
Maker Taiwan Semiconductor Company
Total Page 2 Pages
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