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  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

MBR20H100CT Datasheet

20.0 AMPS. Schottky Barrier Rectifiers

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MBR20H100CT pdf
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COMPLIANCE
MBR20H100CT – MBR20H200CTwww.DataSheet4U.com
20.0 AMPS. Schottky Barrier Rectifiers
TO-220AB
Features
— Plastic material used carries Underwriters
Laboratory Classifications 94V-0
— Metal silicon junction, majority carrier conduction
— Low power loss, high efficiency
— High current capability, low forward voltage drop
— High surge capability
— For use in power supply – output rectification, power
management, instrumentation
— Guardring for overvoltage protection
— High temperature soldering guaranteed:
260oC/10 seconds,0.25”(6.35mm)from case
Mechanical Data
— Cases: JEDEC TO-220AB molded plastic body
— Terminals: Pure tin plated, lead free. solderable per
MIL-STD-750, Method 2026
— Polarity: As marked
— Mounting position: Any
— Mounting torque: 5 in. - lbs. max
— Weight: 0.08 ounce, 2.24 grams
Maximum Ratings and Electrical Characteristics
Rating at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at Tc=125OC
Peak Repetitive Forward Current (Rated VR,
Square Wave, 20KHz) at Tc=125oC
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
method )
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage at:
(Note 2)
IF=10A, TC=25oC
IF=10A, TC=125oC
IF=20A, TC=25oC
IF=20A, TC=125oC
VRRM
VRMS
VDC
I(AV)
IFRM
IFSM
IRRM
VF
Maximum Instantaneous Reverse Current
@ Tc =25 oC at Rated DC Blocking Voltage
@ Tc=125 oC (Note 2)
Voltage Rate of Change (Rated VR)
Maximum Typical Thermal Resistance (Note 3)
IR
dV/dt
RθJC
MBR
20H100CT
100
70
100
MBR
20H150CT
150
105
150
20
MBR
20H200CT
200
140
200
20
150
1.0
0.5
0.85
0.75
0.95
0.85
0.88
0.75
0.97
0.85
5
2.0
10,000
1.5
Units
V
V
V
A
A
A
A
V
uA
mA
V/uS
oC/W
Operating Junction Temperature Range
TJ
-65 to +175
oC
Storage Temperature Range
Notes: 1. 2.0us Pulse Width, f=1.0 KHz
TSTG
-65 to +175
oC
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Thermal Resistance from Junction to Case Per Leg, Mount on Heatsink Size of 2 in x 3 in x 0.25in
Al-Plate.
Version: C09



  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

MBR20H100CT Datasheet

20.0 AMPS. Schottky Barrier Rectifiers

No Preview Available !

MBR20H100CT pdf
www.DataSheet4U.com
RATINGS AND CHARACTERISTIC CURVES (MBR20H100CT - MBR20H200CT)
FIG.1- FORWARD CURRENT DERATING CURVE
20
RESISTIVE OR
INDUCTIVE LOAD
16
12
8
4
0
0 25 50 75 100 125 150 175
CASE TEMPERATURE. (oC)
FIG.3- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS PER LEG
40
FIG.2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT PER LEG
150
Tj=Tj max.
125
8.3ms Single Half Sine Wave
JEDEC Method
100
75
50
25
0
1 10
NUMBER OF CYCLES AT 60Hz
FIG.4- TYPICAL REVERSE CHARACTERISTICS
PER LEG
5
100
10 Tj=1250C
Tj=250C
1
1
0.1
0.01
Tj=1250C
Tj=750C
0.1
Pulse Width=300 s
1% Duty Cycle
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
FORWARD VOLTAGE. (V)
FIG.5- TYPICAL JUNCTION CAPACITANCE PER LEG
5,000
2,000
Tj=250C
f=1.0MHz
Vsig=50mVp-p
1,000
500
200
100
0.1
1.0 10
REVERSE VOLTAGE. (V)
100
0.001
Tj=250C
0.0001
0
20 40
60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.6- TYPICAL TRANSIENT THERMAL IMPEDANCE
PER LEG
100
10.0
1
0.1
0.01
0.1 1 10
T, PULSE DURATION. (sec)
100
Version: C09




Part Number MBR20H100CT
Description 20.0 AMPS. Schottky Barrier Rectifiers
Maker Taiwan Semiconductor Company
Total Page 2 Pages
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