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  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

MBRF10100D Datasheet

10.0AMPS Isolated Schottky Barrier Rectifier

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MBRF10100D pdf
CREAT BY ART
MBRF10100D - MBRF10200D
10.0AMPS Isolated Schottky Barrier Rectifier
ITO-220AB
Features
— Plastic material used carries Underwriters Laboratory
Classifications 94V-0
— Metal silicon junction, majority carrier conduction
— Low power loss, high efficiency
— High current capability, low forward voltage drop
— High Surge capability
— For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
— Guarding for overvoltage protection
— High temperature soldering guaranteed: 260/
10 seconds, 0.25"(6.35mm) from case
— Green compound with suffix "G" on packing
code & prefix "G" on datecode
Mechanical Data
— Case: ITO-220AB molded plastic body
— Terminals: Pure tin plated, lead free, solderable
per MIL-STD-750, Method 2026
— Polarity: As marked
— Mounting position: Any
— Mounting torque: 5 in-lbs. Max.
— Weight: 1.74 grams
Ordering Information (example)
Part No.
Package Packing Packing code
Packing code
(Green)
MBRF10100D ITO-220AB 50 / TUBE
C0
C0G
Maximum Ratings and Electrical Characteristics
Rating at 25 ambient temperature unless otherwise specified.
Parameter
Symbol
MBRF
10100D
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method)
VRRM
VRMS
VDC
IF(AV)
IFSM
100
70
100
Peak Repetitive Reverse Surge Current
IRRM
Maximum Instantaneous Forward Voltage at (Note 1)
IF = 5A, TA=25
IF = 5A, TA=125
IF = 10A, TA=25
IF = 10A, TA=125
0.85
VF 0.75
0.95
0.85
Maximum Reverse Current at Rated DC Blocking Voltage
TA=25
TA=125
IR
Voltage rate of change (Rated VR)
Maximum Thermal Resistance Per Leg (Note 2)
Operating Temperature Range
Storage Temperature Range
Note1: Pulse Test : 300us Pulse Width, 1% Duty cycle
dV/dt
RθJC
TJ
TSTG
Note2: Thermal Resistance from Junction to Case Per Leg
MBRF
10150D
150
105
150
10
120
0.5
MBRF
10200D
200
140
200
0.88
0.78
0.98
0.88
0.1
5
10,000
3.5
-65 to + 150
-65 to + 150
Unit
V
V
V
A
A
A
V
mA
mA
V/uS
OC/W
OC
OC
Version:B13


  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

MBRF10100D Datasheet

10.0AMPS Isolated Schottky Barrier Rectifier

No Preview Available !

MBRF10100D pdf
RATINGS AND CHARACTERISTIC CURVES (MBRF10100D THRU MBRF10150D)
FIG.1 MAXIMUM FORWARD CURRENT
DERATING CURVE
12
10
8
6
4 RESISTER OR
2
INDUCTIVE LOAD
WITH HEATSINK
0
0 25 50 75 100 125
CASE TEMPERATURE ()
150
175
180
150
120
90
60
30
0
1
FIG. 2 MAXIMUM NON-REPETITIVE
FORWARD SURGE CURRENT PER LEG
8.3ms Single Half Sine Wave
JEDEC Method
10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
PER LEG
100
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
PER LEG
10
MBRF10100D
10
1
0.1
1
MBRF10150D-
MBRF10200D
0.01
0.001
0.1
0.4 0.5 0.6 0.7 0.8 0.9
1
FORWARD VOLTAGE (V)
1.1 1.2 1.3
0.0001
0
TA=125
TA=75
TA=25
20 40 60 80 100 120 140
PERCENT OF VR (%)
1000
FIG. 5 TYPICAL JUNCTION CAPACITANCE
PER LEG
TA=25
f=1.0MHz
Vsig=50mVp-p
100
FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE
PER LEG
100
10
1
10
0.1
1 10
REVERSE VOLTAGE (V)
0.1
0.01 0.1 1 10 100
100
T-PULSE DURATION(s)
Version:B13


Part Number MBRF10100D
Description 10.0AMPS Isolated Schottky Barrier Rectifier
Maker Taiwan Semiconductor
Total Page 3 Pages
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