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  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

MBR30200PT Datasheet

Dual Common Cathode Schottky Rectifier

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MBR30200PT pdf
MBR3035PT thru MBR30200PT
Taiwan Semiconductor
CREAT BY ART
Dual Common Cathode Schottky Rectifier
FEATURES
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- UL Recognized File # E-326243
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
TO-247AD (TO-3P)
MECHANICAL DATA
Case: TO-247AD (TO-3P)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity: As marked
Mounting torque: 10 in-lbs maximum
Weight: 6.1 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
MBR MBR MBR MBR MBR MBR MBR MBR
PARAMETER
SYMBOL 3035 3045 3050 3060 3090 30100 30150 30200
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak repetitive forward current
(Rated VR, Square wave, 20KHz)
VRRM
VRMS
VDC
IF(AV)
IFRM
PT PT PT PT PT PT PT PT
35 45 50 60 90 100 150 200
24 31 35 42 63 70 105 140
35 45 50 60 90 100 150 200
30
30
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
200
Peak repetitive reverse surge Current (Note 1)
IRRM
2
1
Maximum instantaneous forward voltage (Note 2)
IF=15A, TJ=25
IF=15A, TJ=125
IF=30A, TJ=25
IF=30A, TJ=125
- 0.75 0.85 0.95 1.05
VF 0.60 0.65 0.75 0.92 -
0.82 -
- 1.02 1.10
0.73 -
- 0.98 -
Maximum reverse current @ rated VR TJ=25
TJ=125
1
IR 20
15
0.5
10
0.1
Voltage rate of change,(Rated VR)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: 2.0μs Pulse Width, f=1.0KHz
dV/dt
RθJC
TJ
TSTG
10,000
1.4
- 55 to +150
- 55 to +150
Note 2: Pulse Test : 300μs Pulse Width, 1% Duty Cycle
UNIT
V
V
V
A
A
A
A
V
mA
V/μs
OC/W
OC
OC
Document Number: DS_D1309029
Version: J13


  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

MBR30200PT Datasheet

Dual Common Cathode Schottky Rectifier

No Preview Available !

MBR30200PT pdf
MBR3035PT thru MBR30200PT
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
MBR30xxPT
(Note 1)
AEC-Q101
QUALIFIED
Prefix "H"
PACKING CODE GREEN COMPOUND
CODE
C0 Suffix "G"
Note 1: "xx" defines voltage from 35V (MBR3035PT) to 200V (MBR30200PT)
PACKAGE
TO-3P
PACKING
30 / Tube
EXAMPLE
PREFERRED P/N PART NO.
MBR3060PT C0
MBR3060PT C0G
MBR3060PTHC0
MBR3060PT
MBR3060PT
MBR3060PT
AEC-Q101
QUALIFIED
H
PACKING CODE
C0
C0
C0
GREEN COMPOUND
CODE
DESCRIPTION
G Green compound
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA=25unless otherwise noted)
FIG.1 FORWARD CURRENT DERATING CURVE
35
30
25
20
15
10
5
0
0
RESISTIVE OR
INDUCTIVELOAD
WITH HEATSINK
25 50
75 100 125 150
CASE TEMPERATURE ()
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
PER LEG
100
TJ=125
10
1
TJ=25
0.1
MBR3035PT-45PT
MBR3050PT-60PT
MBR3090PT-200PT
0.01
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
FORWARD VOLTAGE (V)
FIG. 2 MAXIMUM FORWARD SURGE CURRENT
PER LEG
225
200
175
150
125
100
75
50
25
0
1
8.3ms Single Half Sine Wave
JEDEC Method
10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
PER LEG
100
TJ=125
10
1
0.1
0.01
TJ=25
0.001
0
MBR3035PT-3045PT
MBR3050PT-30200PT
20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Document Number: DS_D1309029
Version: J13


Part Number MBR30200PT
Description Dual Common Cathode Schottky Rectifier
Maker Taiwan Semiconductor
Total Page 4 Pages
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MBR30200PT pdf
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