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  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

MBR10150 Datasheet

Schottky Barrier Rectifiers

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MBR10150 pdf
CREAT BY ART
Schottky Barrier Rectifier
FEATURES
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
TO-220AC
MECHANICAL DATA
Case: TO-220AC
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity: As marked
Mounting torque: 5 in-lbs maximum
Weight: 1.88 g (approximately)
MBR1035 thru MBR10200
Taiwan Semiconductor
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
PARAMETER
MBR MBR MBR MBR MBR MBR MBR MBR
SYMBOL
1035 1045 1050 1060 1090 10100 10150 10200
Maximum repetitive peak reverse voltage
VRRM 35 45 50 60 90 100 150 200
Maximum RMS voltage
Maximum DC blocking voltage
VRMS 24 31 35 42 63 70 105 140
VDC 35 45 50 60 90 100 150 200
Maximum average forward rectified current
IF(AV)
10
Peak repetitive forward current
(Rated VR, Square Wave, 20KHz)
IFRM
20
UNIT
V
V
V
A
A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
150
A
Peak repetitive reverse surge current (Note 1)
Maximum instantaneous forward voltage (Note 2)
IF=10A, TJ=25
IF=10A, TJ=125
Maximum reverse current @ rated VR TJ=25
TJ=125
Voltage rate of change (Rated VR)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
IRRM
VF
IR
dV/dt
RθJC
TJ
TSTG
1.0
0.70
0.57
15
0.5
0.80 0.85 1.05
0.70 0.71
-
0.1
10 6
10000
3
- 55 to +150
- 55 to +175
A
V
mA
V/μs
OC/W
OC
OC
Document Number: DS_D1308050
Version: L13


  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

MBR10150 Datasheet

Schottky Barrier Rectifiers

No Preview Available !

MBR10150 pdf
MBR1035 thru MBR10200
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
MBR10xx
(Note 1)
AEC-Q101
QUALIFIED
Prefix "H"
PACKING CODE GREEN COMPOUND
CODE
C0 Suffix "G"
Note 1: "xx" defines voltage from 35V (MBR1035) to 200V (MBR10200)
PACKAGE
TO-220AC
PACKING
50 / Tube
EXAMPLE
PREFERRED P/N PART NO.
MBR1060 C0
MBR1060 C0G
MBR1060HC0
MBR1060
MBR1060
MBR1060
AEC-Q101
QUALIFIED
H
PACKING CODE
C0
C0
C0
GREEN COMPOUND
CODE
DESCRIPTION
G Green compound
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA=25unless otherwise noted)
FIG.1- FORWARD CURRENT DERATING CURVE
12
10
8
6 RESISTIVE OR
INDUCTIVELOAD
4 WITH HEATSINK
2
MBR1035-MBR1045
MBR1050-MBR10200
0
0 50 100
CASE TEMPERATURE (oC)
150
175
150
125
100
75
50
25
0
FIG. 2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
1 10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 3- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
100
Pulse Width=300μs
1% Duty Cycle
10
TJ=125
1
TJ=25
0.1 MBR1035-MBR1045
MBR1050-MBR1060
MBR1090-MBR10100
MBR10150-MBR10200
0.01
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
FORWARD VOLTAGE (V)
FIG. 4- TYPICAL REVERSE CHARACTERISTICS
100
10 TJ=125
1
TJ=75
0.1
MBR1035-MBR1060
0.01
MBR1090-MBR10200 TJ=25
0.001
0
20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Document Number: DS_D1308050
Version: L13


Part Number MBR10150
Description Schottky Barrier Rectifiers
Maker Taiwan Semiconductor
Total Page 4 Pages
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