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  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

M2N7000 Datasheet

TSM2N7000

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M2N7000 pdf
SOT-92
Pin Definition:
1. Gate
2. Source
3. Drain
TSM2N7000
60V N-Channel MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on)(Ω)
60 5 @ VGS = 10V
ID (mA)
500
Features
Fast Switching Speed
Low Input and Output Leakage
Application
Direct Logic-Level Interface: TTL/CMOS
Solid-State Relays
Ordering Information
Part No.
TSM2N7000CT B0
TSM2N7000CT A3
Package
TO-92
TO-92
Packing
1Kpcs / Bulk
2Kpcs / Ammo
Block Diagram
N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuouswww.DataSheet4U.net Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a,b
Maximum Power Dissipation
Ta = 25oC
Ta = 75oC
VDS
VGS
ID
IDM
IS
PD
Operating Junction Temperature
Operating Junction and Storage Temperature Range
TJ
TJ, TSTG
Thermal Performance
Parameter
Symbol
Lead Temperature (1/8” from case)
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t 5 sec.
TL
RӨJA
1/4
Limit
60
±20
200
500
500
350
280
+150
-55 to +150
Limit
10
357
Unit
V
V
mA
mA
mA
mW
oC
oC
Unit
S
oC/W
Version: A07


  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

M2N7000 Datasheet

TSM2N7000

No Preview Available !

M2N7000 pdf
TSM2N7000
60V N-Channel MOSFET
Electrical Specifications (Ta = 25oC, unless otherwise noted)
Parameter
Conditions
Symbol
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamicb
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switchingc
VGS = 0V, ID = 10µA
VDS = VGS, ID = 1mA
VGS = ±15V, VDS = 0V
VDS = 48V, VGS = 0V
VGS = 10V, ID = 500mA
VGS = 5V, ID = 50mA
VDS = 15V, ID = 300mA
IS = 200mA, VGS = 0V
VDS = 25V, VGS = 0V,
f = 1.0MHz
BVDSS
VGS(TH)
IGSS
IDSS
RDS(ON)
gfs
VSD
Ciss
Coss
Crss
Turn-On Rise Time
VDD = 15V, RL = 30Ω,
Turn-Off Fall Time
Notes:
ID = 500mA,
VGEN = 10V, RG = 25Ω
a. pulse test: PW 300µS, duty cycle 2%
b. For DESIGN AID ONLY, not subject to production testing.
b. Switching time is essentially independent of operating temperature.
tr
tf
Min
60
0.8
--
--
--
--
--
--
--
--
--
--
--
Typ
--
--
--
--
--
7.5
320
1.3
60
25
5
10
10
Max Unit
-- V
3.0 V
±10 nA
1.0 µA
5.0 Ω
--
-- mS
1.5 V
--
-- pF
--
--
nS
--
www.DataSheet4U.net
2/4 Version: A07


Part Number M2N7000
Description TSM2N7000
Maker Taiwan Semiconductor
Total Page 4 Pages
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