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Taiwan Memory Technology
Taiwan Memory Technology

T14L1024N Datasheet Preview

T14L1024N Datasheet

128K X 8 HIGH SPEED CMOS STATIC RAM

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tm TE
CH
SRAM
T14L1024N
128K X 8 HIGH SPEED
CMOS STATIC RAM
FEATURES
Fast Address Access Times : 10/12/15ns
Single 3.3V ±0.3V power supply
Center power/ground pin configuration
Low Power Consumption : 110/105/100mA
TTL I/O compatible
2.0V data retention mode
Automatic power-down when deselected
Available packages :
- 32-pin 300 mil and 400 mil SOJ
- 32-pin TSOP 8x13.4mm and 8x20mm
- 36-Ball CSP (8x10mm)
PART NUMBER EXAMPLES
PACKAGE
SPEED
T14L1024N-10J SOJ 300mil
10ns
T14L1024N-10W SOJ 400 mil
10ns
T14L1024N-10P TSOP 8x13.4mm 10ns
T14L1024N-10H TSOP 8x20mm 10ns
T14L1024N-10C 36-Ball CSP
10ns
GENERAL DESCRIPTION
The T14L1024N is a one-megabit density, fast
static random access memory organized as
131,072 words by 8 bits. It is designed for
use in high performance memory applications
such as main memory storage and high speed
communication buffers. Fabricated using high
performance CMOS technology, access times
down to 10ns are achieved.
BLOCK DIAGRAM
Vcc
Vss
A0
...
DECODER
.
A16
CORE
ARRAY
CE I/O0
.
DATA I/O ..
WE
OE
I/O7
PIN DESCRIPTION
SYMBOL
A0 - A16
I/O0 - I/O7
CE
WE
OE
Vcc
Vss
DESCRIPTION
Address Inputs
Data Inputs/Outputs
Chip Select Inputs
Write Enable
Output Enable
Power Supply
Ground
TM Technology Inc. reserves the right
P. 1
to change products or specifications without notice.
DataSheet4 U .com
Publication Date: APR. 2002
Revision: C




Taiwan Memory Technology
Taiwan Memory Technology

T14L1024N Datasheet Preview

T14L1024N Datasheet

128K X 8 HIGH SPEED CMOS STATIC RAM

No Preview Available !

T14L1024N pdf
www.DataSheet4U.com
tm TE
CH
PIN CONFIGURATION
A0
A1
A2
A3
CE
I/O0
I/O1
Vcc
Vss
I/O2
I/O3
WE
A4
A5
A6
A7
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
SOJ
32 A16
31 A15
30 A14
29 A13
28 OE
27 I/O7
26 I/O6
25 Vss
24 Vcc
23 I/O5
22 I/O4
21 A12
20 A11
19 A10
18 A9
17 A8
A0
A1
A2
A3
CE
I/O0
I/O1
VCC
VSS
I/O2
I/O3
WE
A4
A5
A6
A7
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
TSOP
32 A16
31 A15
30 A14
29 A13
28 OE
27 I/O7
26 I/O6
25 VSS
24 VCC
23 I/O5
22 I/O4
21 A12
20 A11
19 A10
18 A9
17 A8
123456
A A0 A1 NC A3 A6 A8
B
I/O 4 A 2 W E A 4
A 7 I/O 0
C I/O 5
NC A5
I/O 1
D Vss
V cc
E Vcc
V ss
F I/O 6
NC NC
I/O 2
G I/O 7 O E C E A 16 A 15 I/O 3
H A9 A10 A11 A12 A13 A14
36-Ball CSP TOP VIEW (Ball Down)
TM Technology Inc. reserves the right
P. 2
to change products or specifications without notice.
DataSheet4 U .com
T14L1024N
Publication Date: APR. 2002
Revision: C




Taiwan Memory Technology
Taiwan Memory Technology

T14L1024N Datasheet Preview

T14L1024N Datasheet

128K X 8 HIGH SPEED CMOS STATIC RAM

No Preview Available !

T14L1024N pdf
www.DataSheet4U.com
tm TE
CH
T14L1024N
DC CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS
PARAMETER
Power Supply Voltage
Input Voltage
Output Voltage
Operating Temperatrue
Storage Temperature
Power Dissipation
Short Circuit Output Current
SYM
Vcc
VIN
VOUT
TOPR
TSTG
PD
IOUT
RATING
-0.5 to 4.6
-0.5 to Vcc+0.5
-0.5 to Vcc+0.5
0 to +70
-55 to +150
1.0
50
UNIT
V
V
V
°C
°C
W
mA
TRUTH TABLE
CE OE
HX
XX
LH
LL
LX
WE
X
X
H
H
L
MODE
Not Selected
Not Selected
Output Disable
Read
Write
I/O0- I/O7
High-Z
High-Z
High-Z
Data Out
Data In
Vcc
ISB, ISB1
ISB, ISB1
Icc
Icc
Icc
OPERATING CHARACTERISTICS
(Vcc = 3.3V ±0.3V, Ta = 0 to 70°C)
PARAMETER
Power Supply Voltage
Input Low Voltage
Input High Voltage
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
Operating Power
Supply Current
Standby Power
Supply Current
SYM.
Vcc
VIL
VIH
ILI
ILO
VOL
VOH
Icc
ISB
ISB1
TEST CONDITIONS
VIN =Vss to Vcc
VIN=Vss to Vcc , CE = VIH
OE = VIH or WE
IOL = 4.0 mA
IOH =-2.0 mA
CE = VIL
= VIL
10ns
f=max
12ns
IO = 0mA
15ns
CE =VIH, IO = 0mA
Vcc = max; CE Vcc-0.2V; f=0mhz;
IO = 0mA
Note: Typical characteristics are at Vcc = 3.3V, Ta = 25°C
MIN.
3.0
-0.5
2.1
-
-
-
2.4
-
-
-
-
-
MAX.
3.6
0.8
Vcc+0.3
5
UNIT
V
V
V
uA
5 uA
0.4 V
-V
110 mA
105 mA
100 mA
25 mA
5 mA
TM Technology Inc. reserves the right
P. 3
to change products or specifications without notice.
DataSheet4 U .com
Publication Date: APR. 2002
Revision: C




Part Number T14L1024N
Description 128K X 8 HIGH SPEED CMOS STATIC RAM
Maker Taiwan Memory Technology
Total Page 13 Pages
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