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TMPF7N60 Datasheet Preview

TMPF7N60 Datasheet

FET

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TMPF7N60 pdf
Features
Low gate charge
100% avalanche tested
Improved dv/dt capability
RoHS compliant
Halogen free package
JEDEC Qualification
TMP7N60/TMPF7N60
TMP7N60G/TMPF7N60G
VDSS = 660 V @Tjmax
ID = 7A
RDS(on) = 1.25 W(max) @ VGS= 10 V
D
G
S
Device
TMP7N60 / TMPF7N60
TMP7N60G / TMPF7N60G
Package
TO-220 / TO-220F
TO-220 / TO-220F
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
TC = 25
TC = 100
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25
Derate above 25
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Marking
TMP7N60 / TMPF7N60
TMP7N60G / TMPF7N60G
Remark
RoHS
Halogen Free
Symbol
VDSS
VGS
ID
IDM
EAS
IAR
EAR
PD
dv/dt
TJ, TSTG
TL
TMP7N60(G) TMPF7N60(G)
600
±30
7 7*
4.3 4.3 *
28 28*
200
7
14.3
143 46.6
1.16 0.37
4.5
-55~150
300
Unit
V
V
A
A
A
mJ
A
mJ
W
W/
V/ns
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
Symbol
RqJC
RqJA
April 2010 : Rev1
www.trinnotech.com
TMP7N60(G)
0.87
62.5
TMPF7N60(G)
2.68
62.5
Unit
/W
/W
1/5



TRinno
TRinno

TMPF7N60 Datasheet Preview

TMPF7N60 Datasheet

FET

No Preview Available !

TMPF7N60 pdf
TMP7N60/TMPF7N60
TMP7N60G/TMPF7N60G
Electrical Characteristics : TC=25, unless otherwise noted
Parameter
Symbol
Test condition
Min Typ Max Units
OFF
Drain-Source Breakdown Voltage
V(BR)DSS VGS = 0 V, ID = 250 µA 600 -- -- V
Zero Gate Voltage Drain Current
VDS = 600 V, VGS = 0 V
--
IDSS
VDS = 480 V, TC = 125°C
--
-- 1 µA
-- 10 µA
Forward Gate-Source Leakage Current
IGSSF
VGS = 30 V, VDS = 0 V
--
-- 100 nA
Reverse Gate-Source Leakage Current
IGSSR
VGS = -30 V, VDS = 0 V
--
--
-100
nA
ON
Gate Threshold Voltage
Drain-Source On-Resistance
Forward Transconductance (Note 4)
VGS(th)
RDS(on)
gFS
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 3.5 A
VDS = 30 V, ID = 3.5 A
2
--
--
-- 4 V
1 1.25 W
9 -- S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING
Turn-On Delay Time (Note 4,5)
Turn-On Rise Time (Note 4,5)
Turn-Off Delay Time (Note 4,5)
Turn-Off Fall Time (Note 4,5)
Total Gate Charge (Note 4,5)
Gate-Source Charge (Note 4,5)
Gate-Drain Charge (Note 4,5)
SOURCE DRAIN DIODE
Maximum Continuous Drain-Source
Diode Forward Current
Maximum Pulsed Drain-Source
Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time (Note 4)
Reverse Recovery Charge (Note 4)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
IS
ISM
VSD
trr
Qrr
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
VDD = 300 V, ID = 7 A,
RG = 25
VDS = 480V, ID = 7 A,
VGS = 10 V
-- 1115 --
-- 96 --
-- 5.6 --
-- 44.5 --
-- 30 --
-- 127 --
-- 45.5 --
-- 21 --
-- 4 --
-- 6.7 --
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
---
---
VGS = 0 V, IS = 7 A
VGS = 0 V, IS = 7 A
dIF / dt = 100 A/µs
-- --- 7 A
-- -- 28 A
-- -- 1.5 V
-- 306 --
ns
-- 2.1 -- µC
Note :
1. Repeated rating : Pulse width limited by safe operating area
2. L=7.5mH, I AS =7A, VDD = 50V, RG = 25Ω, Starting TJ= 25
3 I SD ≤ 7A, di/dt ≤ 200A/µs , VDD ≤ BVDS, Starting TJ= 25
4. Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
April 2010 : Rev1
www.trinnotech.com
2/5


Part Number TMPF7N60
Description FET
Maker TRinno
Total Page 5 Pages
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TMPF7N60 pdf
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