| Description | TEMIC Siliconix N-Channel Enhancement-Mode Transistor Product Summary V(BR)nSS (V) 200 rnS(on) (Q) 0.16 In (A) 14 TO-257AB D Hermetic Package o 2N7086 Case Isolated GD S TopV,ew S N-Channel MOSFET Absolute Maximum Ratings (Tc = 25°C Unless Othernise Noted) Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current (TJ = IS0"C) Pulsed Drain Current Maximum Power Di... |
| Features |
BR)DSS
VGS = Ov, 10 = 250 flA
200
Gate Threshold Voltage
VGS(th)
VOS = VGS, 10 = 250 flA
2.0
Gate-Body Leakage
IGSS
VOS= OV,VGS = ±20V
Zero Gate Voltage Drain Current On-State Drain Currentb
Vos = 160 V, VGS = OV loss
Vos = 160 V, VGS = 0 V, TJ = 125°C
10(on)
Vos -tov, VGS = 10V
14
Drain-Source On-State Resistanceb
ros(on)
VGS - to...
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| Datasheet |
 2N7086 Datasheet - 203.59KB |
