SVF8N60F
DESCRIPTION
SVF8N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-Cell TM structure VDMOS technology. The improved planar stripe cell and the improved guarding ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers.
FEATURES
∗ 8A,600V,RDS(on)(typ.)=0.96Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No. SVF8N60T SVF8N60F Package TO-220-3L TO-220F-3L Marking SVF8N60T SVF8N60F Material Pb free Pb free packing Tube Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://.silan..cn
REV:1.3
2012.06.15 Page 1 of 8
SVF8N60T/F_Datasheet
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Characteristics Drain-Source...
