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SemiWell Semiconductor
SemiWell Semiconductor

SFF840 Datasheet Preview

SFF840 Datasheet

N-Channel MOSFET

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SFF840 pdf
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SemiWell Semiconductor
SFF840
N-Channel MOSFET
Features
RDS(on) (Max 0.85 )@VGS=10V
Gate Charge (Typical 38nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (150°C)
General Description
This Power MOSFET is produced using Semiwell’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switching DC/DC converters, switch mode power
supply, DC-AC converters for uninterruped power supply, motor
control.
Symbol
1. Gate{
{ 2. Drain
◀▲
{ 3. Source
TO-220F
123
Absolute Maximum Ratings (* Drain current limited by junction temperature)
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current(@TC = 25°C)
Continuous Drain Current(@TC = 100°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
(Note 1)
(Note 2)
(Note 1)
(Note 3)
Value
500
8.0*
5.1*
32*
±25
320
13.4
5.5
44
0.35
- 55 ~ 150
300
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Min.
-
-
Value
Typ.
-
-
Max.
2.86
62.5
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W



SemiWell Semiconductor
SemiWell Semiconductor

SFF840 Datasheet Preview

SFF840 Datasheet

N-Channel MOSFET

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SFF840 pdf
www.DataSheet4U.com
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
500 --
BVDSS Breakdown Voltage Temperature
/ TJ Coefficient
ID = 250 µA, Referenced to 25°C -- 0.50
IDSS Zero Gate Voltage Drain Current
VDS = 500 V, VGS = 0 V
VDS = 400 V, TC = 125°C
-- --
-- --
IGSSF
Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V
-- --
IGSSR
Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V
-- --
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
2.0 --
4.0
VGS = 10 V, ID = 4.0 A
-- 0.70 0.85
VDS = 40 V, ID = 4.0 A
(Note 4)
--
7.0
--
V
S
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 1570 2040
-- 150 195
-- 15 20
pF
pF
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 250V, ID = 8.0 A,
RG = 25
-- 25 60
-- 75 160
-- 125 260
(Note 4, 5)
--
75
160
VDS = 400 V, ID = 8.0A,
-- 38 50
VGS = 10 V
-- 8
--
(Note 4, 5) --
13
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- -- 8.0
ISM Maximum Pulsed Drain-Source Diode Forward Current
-- -- 32
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 8.0 A
-- -- 1.5
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 8.0 A,
-- 270
dIF / dt = 100 A/µs
(Note 4) -- 1.89
--
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 9.0mH, IAS = 8.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 8.0A, di/dt 300µA/s, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
A
A
V
ns
µC


Part Number SFF840
Description N-Channel MOSFET
Maker SemiWell Semiconductor
Total Page 7 Pages
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