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Seme LAB
Seme LAB

D1053 Datasheet Preview

D1053 Datasheet

METAL GATE RF SILICON FET

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D1053 pdf
TetraFET
D1053UK
METAL GATE RF SILICON FET
MECHANICAL DATA
B
B
A
A
DE
(2
C
pls)
2
3
4
5
1
98 76
K
O
(2 pls)
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
50W – 28V – 1GHz
PUSH–PULL
F
G
PIN 1
PIN 3
PIN 5
PIN 7
PIN 9
HJ
I
DB
SOURCE (COMMON)
DRAIN 2
DRAIN 4
GATE 3
GATE 1
PIN 2
PIN 4
PIN 6
PIN 8
MN
DRAIN 1
DRAIN 3
GATE 4
GATE 2
DIM mm
A 1.52
B 1.52
C 45°
D 16.38
E 6.35
F 18.41
G 12.70
H 5.08
I 24.76
J 1.52
K 0.81R
M 0.13
N 2.16
O 1.65R
Tol. Inches Tol.
0.13 0.060 0.005
0.13 0.060 0.005
5° 45° 5°
0.26 0.645 0.010
0.13 0.250 0.005
0.13 0.725 0.005
0.26 0.500 0.010
0.13 0.200 0.005
0.13 0.975 0.005
0.13 0.060 0.005
0.13 0.032R 0.005
0.02 0.005 0.001
0.13 0.085 0.005
0.13 0.065R 0.005
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• VERY LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 7.5 dB MINIMUM
APPLICATIONS
VHF/UHF COMMUNICATIONS
from 400 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD Power Dissipation
175W
BVDSS
Drain – Source Breakdown Voltage
70V
BVGSS
Gate – Source Breakdown Voltage
±20V
ID(sat)
Drain Current
5A
Tstg Storage Temperature
–65 to 150°C
Tj Maximum Operating Junction Temperature
200°C
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 3/95



Seme LAB
Seme LAB

D1053 Datasheet Preview

D1053 Datasheet

METAL GATE RF SILICON FET

No Preview Available !

D1053 pdf
D1053UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
BVDSS
Drain–Source Breakdown
Voltage
PER SIDE
VGS = 0
ID = 100mA
70
IDSS
Zero Gate Voltage
Drain Current
VDS = 28V
VGS = 0
IGSS
Gate Leakage Current
VGS(th) Gate Threshold Voltage*
gfs Forward Transconductance*
Gate Threshold Voltage
VGS(th)match Matching Between Sides
VGS = 20V
ID = 10mA
VDS = 10V
ID = 10mA
VDS = 0
VDS = VGS
ID = 1A
VDS = VGS
1
0.8
GPS
η
VSWR
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
TOTAL DEVICE
PO = 50W
VDS = 28V
IDQ = 0.8A
f = 1GHz
7.5
45
20:1
Ciss
Coss
Crss
PER SIDE
Input Capacitance
VDS = 0
VGS = –5V f = 1MHz
Output Capacitance
VDS = 28V VGS = 0 f = 1MHz
Reverse Transfer Capacitance VDS = 28V VGS = 0 f = 1MHz
* Pulse Test: Pulse Duration = 300 µs , Duty Cycle 2%
Typ.
Max. Unit
V
1 mA
1 µA
7V
mhos
0.1 V
dB
%
60 pF
30 pF
2.5 pF
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
RTHj–case
Thermal Resistance Junction – Case
Max. 1.0°C / W
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 3/95


Part Number D1053
Description METAL GATE RF SILICON FET
Maker Seme LAB
Total Page 2 Pages
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