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Seme LAB
Seme LAB

D1015UK Datasheet Preview

D1015UK Datasheet

METAL GATE RF SILICON FET

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D1015UK pdf
TetraFET
D1015UK
MECHANICAL DATA
C
AD
B
(4 pls)
2
1
3
54
I
F
G
(t yp )
E
PIN 1
PIN 3
PIN 5
NM
H
DH
SOURCE (COMMON)
DRAIN 2
GATE 1
JK
PIN 2
PIN 4
DRAIN 1
GATE 2
DIM mm
A 13.97
B 5.72
C 45°
D 9.78
E 1.65R
F 23.75
G 1.52R
H 30.48
I 19.17
J 0.13
K 2.54
M 1.52
N 5.08
Tol. Inches Tol.
0.26 0.550 0.010
0.13 0.225 0.005
5° 45° 5°
0.13 0.385 0.005
0.13 0.065R 0.005
0.13 0.935 0.005
0.13 0.060R 0.005
0.13 1.200 0.005
0.26 0.755 0.010
0.02 0.005 0.001
0.13 0.100 0.005
0.13 0.060 0.005
0.50 0.200 0.020
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
125W – 28V – 400MHz
PUSH–PULL
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 13 dB MINIMUM
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 400 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD Power Dissipation
350W
BVDSS
Drain – Source Breakdown Voltage *
70V
BVGSS
Gate – Source Breakdown Voltage *
±20V
ID(sat)
Drain Current *
20A
Tstg Storage Temperature
–65 to 150°C
Tj Maximum Operating Junction Temperature
200°C
* Per Side
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 11/00



Seme LAB
Seme LAB

D1015UK Datasheet Preview

D1015UK Datasheet

METAL GATE RF SILICON FET

No Preview Available !

D1015UK pdf
D1015UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
DrainSource
BVDSS Breakdown Voltage
PER SIDE
VGS = 0
ID = 100mA
70
IDSS
Zero Gate Voltage
Drain Current
VDS = 28V
VGS = 0
IGSS Gate Leakage Current
VGS(th) Gate Threshold Voltage*
gfs Forward Transconductance*
GPS
h
Common Source Power Gain
Drain Efficiency
VSWR Load Mismatch Tolerance
VGS = 20V
VDS = 0
ID = 10mA
VDS = VGS
VDS = 10V
ID = 4A
TOTAL DEVICE
PO = 125W
VDS = 28V
IDQ = 1.6A
f = 500MHz
1
3.2
13
50
20:1
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
PER SIDE
VDS = 28V VGS = 5V f = 1MHz
VDS = 28V VGS = 0 f = 1MHz
VDS = 28V VGS = 0 f = 1MHz
Typ.
Max. Unit
V
4 mA
1 mA
7V
S
dB
%
240 pF
120 pF
10 pF
* Pulse Test: Pulse Duration = 300 ms , Duty Cycle £ 2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
RTHjcase
Thermal Resistance Junction Case
Max. 0.5°C / W
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 11/00


Part Number D1015UK
Description METAL GATE RF SILICON FET
Maker Seme LAB
Total Page 4 Pages
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