http://www.www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf





Seme LAB
Seme LAB

D1010UK Datasheet Preview

D1010UK Datasheet

METAL GATE RF SILICON FET

No Preview Available !

D1010UK pdf
TetraFET
D1010UK
MECHANICAL DATA
C
(2 pls)
HD
1
B
2
3
54
E
(4 pls)
F
I
G
(typ)
P
(2 pls) A
PIN 1
PIN 3
PIN 5
NM
O
DR
SOURCE (COMMON)
DRAIN 2
GATE 1
JK
PIN 2
PIN 4
DRAIN 1
GATE 2
DIM Millimetres Tol.
A 19.05 0.50
B 10.77 0.13
C 45°
D 9.78 0.13
E 5.71 0.13
F 27.94 0.13
G 1.52R 0.13
H 10.16 0.13
I 22.22 MAX
J 0.13 0.02
K 2.72 0.13
M 1.70 0.13
N 5.08 0.50
O 34.03 0.13
P 1.57R 0.08
Inches
0.75
0.424
45°
0.385
0.225
1.100
0.060R
0.400
0.875
0.005
0.107
0.067
0.200
1.340
0.062R
Tol.
0.020
0.005
0.005
0.005
0.005
0.005
0.005
MAX
0.001
0.005
0.005
0.020
0.005
0.003
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
125W – 28V – 500MHz
PUSH–PULL
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 400 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD Power Dissipation
350W
BVDSS
Drain – Source Breakdown Voltage *
70V
BVGSS
Gate – Source Breakdown Voltage *
±20V
ID(sat)
Drain Current *
20A
Tstg Storage Temperature
–65 to 150°C
Tj Maximum Operating Junction Temperature
200°C
* Per Side
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 01/01



Seme LAB
Seme LAB

D1010UK Datasheet Preview

D1010UK Datasheet

METAL GATE RF SILICON FET

No Preview Available !

D1010UK pdf
D1010UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
BVDSS
DrainSource Breakdown
Voltage
PER SIDE
VGS = 0
ID = 100mA
70
IDSS
Zero Gate Voltage
Drain Current
VDS = 28V
VGS = 0
IGSS
VGS(th)
gfs
GPS
h
VSWR
Gate Leakage Current
Gate Threshold Voltage*
Forward Transconductance*
TOTAL D
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
VGS = 20V
ID = 10mA
VDS = 10V
PO = 125W
VDS = 28V
f = 400MHz
VDS = 0
VDS = VGS
ID = 5A
IDQ = 2A
1
3.2
10
50
20:1
Ciss
Coss
Crss
Input Capacitance
VDS = 0
Output Capacitance
VDS = 28V
Reverse Transfer Capacitance VDS = 28V
PER SIDE
VGS = 5V
VGS = 0
VGS = 0
f = 1MHz
f = 1MHz
f = 1MHz
* Pulse Test: Pulse Duration = 300 ms , Duty Cycle £ 2%
Typ.
Max. Unit
V
4 mA
1 mA
7V
S
dB
%
240 pF
120 pF
10 pF
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
RTHjcase
Thermal Resistance Junction Case
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Max. 0.5°C / W
Prelim. 01/01


Part Number D1010UK
Description METAL GATE RF SILICON FET
Maker Seme LAB
Total Page 5 Pages
PDF Download
D1010UK pdf
Download PDF File
D1010UK pdf
View for Mobile



Buy Electronic Components




Related Datasheet

1 D1010UK METAL GATE RF SILICON FET Seme LAB
Seme LAB
D1010UK pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components