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SavantIC
SavantIC

2SC2612 Datasheet Preview

2SC2612 Datasheet

SILICON POWER TRANSISTOR

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2SC2612 pdf
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-220 package
·High collector breakdown voltage
: VCEO=400V(Min)
APPLICATIONS
·For high voltage ,high speed and
high power switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Product Specification
2SC2612
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
IB
PC
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-Peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
500
400
7
3
6
1.5
30
150
-55~150
UNIT
V
V
V
A
A
A
W



SavantIC
SavantIC

2SC2612 Datasheet Preview

2SC2612 Datasheet

SILICON POWER TRANSISTOR

No Preview Available !

2SC2612 pdf
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
Product Specification
2SC2612
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ,RBE=;,L=100mH
400
V
V(BR)EBO Emitter-base breakdown voltage
IE=10mA; IC=0
7
V
VCEsat Collector-emitter saturation voltage IC=1.5A; IB=0.3A
1.0 V
VBEsat Base-emitter saturation voltage
IC=1.5A; IB=0.3A
1.5 V
ICBO Collector cut-off current
VCB=400V; IE=0
100 µA
ICEO Collector cut-off current
VCE=350V; RBE=;
100 µA
hFE-1
DC current gain
IC=1.5A ; VCE=5V
15
hFE-2
DC current gain
IC=3A ; VCE=5V
7
Switching times
ton Turn-on time
tstg Storage time
tf Fall time
IC=3.0A IB1=- IB2=0.6A
VCC@150V
1.0
1.2 2.5
1.0
µs
µs
µs
2


Part Number 2SC2612
Description SILICON POWER TRANSISTOR
Maker SavantIC
Total Page 4 Pages
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