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Sanyo Electric Components Datasheet

TIG030TS Datasheet

N-Channel IGBT Light-Controlling Flash Applications

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TIG030TS pdf
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Ordering number : ENA0637A
TIG030TS
SANYO Semiconductors
DATA SHEET
TIG030TS
N-Channel IGBT
Light-Controlling Flash Applications
Features
Low-saturation voltage.
4V drive.
Enhansment type.
Built-in gate-to-emitter protection diode.
Mounting height 1.1mm, mounting area 19.2mm2.
dv / dt guarantee.*
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage (DC)
Gate-to-Emitter Voltage (Pulse)
Collector Current (Pulse)
Maximum Collector-to-Emitter dv / dt
Channel Temperature
Storage Temperature
Symbol
VCES
VGES
VGES
ICP
dVCE / dt
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW1ms
PW500µs, duty cycle0.5%, CM=400µF
VCE320V, starting Tch=25°C
Parameter
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Cutoff Current
Gate-to-Emitter Leakage Current
Marking : G030
Symbol
Conditions
V(BR)CES
ICES
IGES
IC=2mA, VGE=0V
VCE=320V, VGE=0V
VGE=±6V, VCE=0V
Ratings
400
±6
±8
150
400
150
--40 to +150
Unit
V
V
V
A
V / µs
°C
°C
min
400
Ratings
typ
max
Unit
V
10 µA
±10 µA
Continued on next page.
* : Conduct 100% screening of dv / dt (slope of collector voltage at the time of turn-off) by dv / dt>400V/µs.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
53007 TI IM / 11007PJ TI IM TC-00000459 No. A0637-1/4


Sanyo Electric Components Datasheet

TIG030TS Datasheet

N-Channel IGBT Light-Controlling Flash Applications

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TIG030TS pdf
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Continued from preceding page.
Parameter
Gate-to-Emitter Threshold Voltage
Collector-to-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
TIG030TS
Symbol
VGE(off)
VCE(sat)
Cies
Coes
Cres
Conditions
VCE=10V, IC=1mA
IC=150A, VGE=4V
VCE=10V, f=1MHz
VCE=10V, f=1MHz
VCE=10V, f=1MHz
min
0.5
Ratings
typ
3.7
2610
59
36
max
1.2
5.4
Unit
V
V
pF
pF
pF
Package Dimensions
unit : mm (typ)
7006A-007
Electrical Connection
3.0
85
0.125
14
0.25
0.65
1 : Collector
2 : Collector
3 : Collector
4 : Collector
5 : Emitter
6 : Emitter
7 : Emitter
8 : Gate
SANYO : TSSOP8
8 765
1 234
1 : Collector
2 : Collector
3 : Collector
4 : Collector
5 : Emitter
6 : Emitter
7 : Emitter
8 : Gate
Top view
Large Current R Load Screening Circuit
RL=2.0
RG50
+
CM=400µF
TIG030TS
4V
0V
100k
VCC=320V
Note1. Gate Series Resistance RG50is recommended for prolection purpose at the time of turn OFF. However,
if dv/dt400V/µs is satisfied at customer’s actual set evaluation, RG<50can also be used.
Note2. The collector voltage gradient dv / dt must be smaller than 400V / µs to protect the device when it is turned off.
No. A0637-2/4


Part Number TIG030TS
Description N-Channel IGBT Light-Controlling Flash Applications
Maker Sanyo Semicon Device
Total Page 4 Pages
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