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Sanyo Electric Components Datasheet

TIG004SS Datasheet

Light-Controlling Strobe Applications

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Ordering number : ENN7397
TIG004SS
N-Channel IGBT
TIG004SS
Light-Controlling Strobe Applications
Features
Low-saturation voltage.
4V drive.
Enhansment type.
Built-in Gate-to-Emitter protection diode.
Package Dimensions
unit : mm
2203
[TIG004SS]
85
Specifications
Absolute Maximum Ratings at Ta=25°C
1
5.0
4
0.595 1.27 0.43
1 : Emitter
2 : Emitter
3 : Emitter
0.2 4 : Gate
5 : Collector
6 : Collector
7 : Collector
8 : Collector
SANYO : SOP8
Parameter
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage (DC)
Gate-to-Emitter Voltage (Pulse)
Collector Current (Pulse)
Channel Temperature
Storage Temperature
Symbol
VCES
VGES
VGES
ICP
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW500µs, duty cycle0.5%
Ratings
400
±6
±8
150
150
--40 to +150
Unit
V
V
V
A
°C
°C
Parameter
Symbol
Conditions
min
Collector-to-Emitter Breakdown Voltage
V(BR)CES IC=5mA, VGE=0
400
Collector-to-Emitter Cutoff Current
ICES
VCE=320V, VGE=0
Gate-to-Emitter Leakage Current
IGES
VGE=±6V, VCE=0
Gate-to-Emitter Threshold Voltage
VGE(off) VCE=10V, IC=1mA
0.5
Collector-to-Emitter Saturation Voltage
VCE(sat)1
VCE(sat)2
IC=150A, VGE=4V
IC=60A, VGE=2.5V
Input Capacitance
Cies
VCE=10V, f=1MHz
Output Capacitance
Coes
VCE=10V, f=1MHz
Reverse Transfer Capacitance
Cres
VCE=10V, f=1MHz
Note : TIG004SS has protection diode between gate and emitter but handling it requires sufficient care to be taken.
Ratings
typ
4.2
2.4
3300
75
40
max
10
±10
1.2
5.5
3.4
Unit
V
µA
µA
V
V
V
pF
pF
pF
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22004 TS IM TA-3794 No.7397-1/3


Sanyo Electric Components Datasheet

TIG004SS Datasheet

Light-Controlling Strobe Applications

No Preview Available !

TIG004SS pdf
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Electrical Connection
C C CC
8 7 65
TIG004SS
1 2 34
E E EG
200
Tc=25°C
180
160
IC -- VCE
5V
4V
140
120 3V
100
80
60 VGE=2V
40
20
0
012345
Collector-to-Emitter Voltage, VCE -- V IT04213
VCE -- VGE
5.0
Tc=25°C
4.5
IC=150A
4.0
3.5 120A
3.0 90A
2.5 60A
2.0
1.5
1.0
0.5
0
012 34 56
Gate-to-Emitter Voltage, VGE -- V IT04215
VGE(off) -- Tc
1.2
VCE=10V
IC=1mA
1.0
0.8
0.6
0.4
0.2
0
--50 --25
0 25 50 75 100
Case Temperature, Tc -- °C
125 150
IT04217
180
Tc=25°C
160 VCE=5V
IC -- VGE
140
120
100
80
60
40
20
0
0
10000
7
5
3
2
1000
7
5
3
2
100
7
5
3
2
10
0
7
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Gate-to-Emitter Voltage, VGE -- V IT04214
Cies, Coes, Cres -- VCE
Cies
Coes
Cres
5 10 15 20 25 30 35 40 45
Collector-to-Emitter Voltage, VCE -- V IT04216
VCE(sat) -- Tc
6
5 VGE=4.0V, IC=150A
4
3 VGE=2.5V, IC=60A
2
1
0
--50 --25
0 25 50 75 100
Case Temperature, Tc -- °C
125 150
IT04218
No.7397-2/3


Part Number TIG004SS
Description Light-Controlling Strobe Applications
Maker Sanyo Semicon Device
Total Page 3 Pages
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