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Sanyo Electric Components Datasheet

2SD1998 Datasheet

PNP / NPN Epitaxial Planar Silicon Transistors

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2SD1998 pdf
Ordering number : EN3130A
2SB1324 / 2SD1998
SANYO Semiconductors
DATA SHEET
2SB1324 / 2SD1998 PNP / NPN Epitaxial Planar Silicon Transistors
Compact Motor Driver Applications
Features
Low saturation voltage.
Contains diode between collector and emitter.
Contains bias resistance between collector and emitter.
Large current capacity.
Small-sized package making it easy to provide high-density, small-sized hybrid ICs.
Specifications ( ) : 2SB1324
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
Mounted on a ceramic board (250mm20.8mm)
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
DC Current Gain
Marking 2SB1324 : BL
2SD1998 : DM
Symbol
ICBO
hFE1
hFE2
Conditions
VCB=(--)30V, IE=0A
VCE=(--)2V, IC=(--)0.5A
VCE=(--)2V, IC=(--)2A
Ratings
(--)40
(--)30
(--)6
(--)3
(--)5
1.5
150
--55 to +150
Unit
V
V
V
A
A
W
°C
°C
min
75
50
Ratings
typ
max
(--)1.0
Unit
μA
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
www.semiconductor-sanyo.com/network
31710EA TK IM / 41504TN (PC)/O1598HA (KT)/6089MO, TS No.3130-1/4


Sanyo Electric Components Datasheet

2SD1998 Datasheet

PNP / NPN Epitaxial Planar Silicon Transistors

No Preview Available !

2SD1998 pdf
2SB1324 / 2SD1998
Continued from preceding page.
Parameter
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Diode Forwad Voltage
Base-to-Emitter Resistance
Symbol
Conditions
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO1
V(BR)CEO2
VF
RBE
VCE=(--)2V, IC=(--)0.5A
VCB=(--)10V, f=1MHz
IC=(--)2A, IB=(--)100mA
IC=(--)2A, IB=(--)100mA
IC=(--)10μA, IE=0A
IC=(--)10μA, RBE=
IC=(--)10μA, RBE=
IF=0.5A
Ratings
min typ
100
(55)40
(--0.25)0.2
(--)40
(--)40
(--)30
0.8
max
(--0.6)0.5
(--)1.5
1.5
Unit
MHz
pF
V
V
V
V
V
V
kΩ
Package Dimensions
unit : mm (typ)
7007B-004
Electrical Connection
Collector
Collector
Base
RBE
Emitter
PNP
Base
RBE
Emitter
NPN
5
2SB1324
3
2
hFE -- IC
100
7
5
Ta=75°C2-5-°2C5°C
3
2
VCE= --2V
10
7
5
--0.01
23
5 7 --0.1 2 3 5 7 --1.0
Collector Current, IC -- A
23 5
ITR09586
5
2SD1998
3
2
hFE -- IC
100
7
5
3
Ta=75°C2-5-2°C5°C
2
VCE=2V
10
7
5
0.01
2 3 5 7 0.1
2 3 5 7 1.0
Collector Current, IC -- A
235
ITR09587
No.3130-2/4


Part Number 2SD1998
Description PNP / NPN Epitaxial Planar Silicon Transistors
Maker Sanyo Semicon Device
Total Page 4 Pages
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