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2SC3642 Sanyo Semicon Device NPN Triple Diffused Planar Silicon Transistor

Description Ordering number:EN1626C NPN Triple Diffused Planar Silicon Transistor 2SC3642 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High reliability (Adoption of HVP process). · Fast speed. · High breakdown voltage. · Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC3642] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to...
Features
· High reliability (Adoption of HVP process).
· Fast speed.
· High breakdown voltage.
· Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC3642] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Col...

Datasheet PDF File 2SC3642 Datasheet - 117.30KB

2SC3642  






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